Potential Induced Degradation Effect on n-Type Solar Cells with Boron Emitter

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU124140" target="_blank" >RIV/00216305:26220/17:PU124140 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Potential Induced Degradation Effect on n-Type Solar Cells with Boron Emitter

Popis výsledku v původním jazyce

This study is focusing on Potential Induced Degradation (PID) effect on n-type solar cells with boron emitter. We designed and fabricated single cell modules using n-PERT cells with textured and flat front side, and with various passivation structures on the front side to prevent PID at the cell level. The modules were characterized before and after PID testing by electroluminescence (EL), IV measurements, reflection and Internal Quantum Efficiency (IQE). Measurements were done on both sides of module to obtain whether the degradation was going on the front side, rear side or both. Comparison of IQE of front vs rear side shows, that intensity of degradation is fully influenced by properties of the front side of antireflection and passivation (ARC) layer.

Název v anglickém jazyce

Potential Induced Degradation Effect on n-Type Solar Cells with Boron Emitter

Popis výsledku anglicky

This study is focusing on Potential Induced Degradation (PID) effect on n-type solar cells with boron emitter. We designed and fabricated single cell modules using n-PERT cells with textured and flat front side, and with various passivation structures on the front side to prevent PID at the cell level. The modules were characterized before and after PID testing by electroluminescence (EL), IV measurements, reflection and Internal Quantum Efficiency (IQE). Measurements were done on both sides of module to obtain whether the degradation was going on the front side, rear side or both. Comparison of IQE of front vs rear side shows, that intensity of degradation is fully influenced by properties of the front side of antireflection and passivation (ARC) layer.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 23rd Conference STUDENT EEICT 2017

ISBN

978-80-214-5496-5

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

517-521

Název nakladatele

Neuveden

Místo vydání

Neuveden

Místo konání akce

Brno

Datum konání akce

27. 4. 2017

Typ akce podle státní příslušnosti

CST - Celostátní akce

Kód UT WoS článku

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