Thermal stability of gallium arsenide solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU125832" target="_blank" >RIV/00216305:26220/17:PU125832 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2292673" target="_blank" >http://dx.doi.org/10.1117/12.2292673</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2292673" target="_blank" >10.1117/12.2292673</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermal stability of gallium arsenide solar cells

Popis výsledku v původním jazyce

This article summarizes a measurement of gallium arsenide (GaAs) solar cells during their thermal processing. These solar cells compared to standard silicon cells have better efficiency and high thermal stability. However, their use is partly limited due to high acquisition costs. For these reasons, GaAs cells are deployed only in the most demanding applications where their features are needed, such as space applications. In this work, GaAs solar cells were studied in a high temperature range within 30–650 ◦ C where their functionality and changes in surface topology were monitored. These changes were recorded using an electron microscope which determined the position of the defects; using an atomic force microscope we determined the roughness of the surface and an infrared camera that showed us the thermal radiated places of the defected parts of the cell. The electrical characteristics of the cells during processing were determined by its current-voltage characteristics. Despite the occurrence of subtle changes on the solar cell with newly created surface features after 300 ◦ C thermal processing, its current-voltage characteristic remained without a significant change.

Název v anglickém jazyce

Thermal stability of gallium arsenide solar cells

Popis výsledku anglicky

This article summarizes a measurement of gallium arsenide (GaAs) solar cells during their thermal processing. These solar cells compared to standard silicon cells have better efficiency and high thermal stability. However, their use is partly limited due to high acquisition costs. For these reasons, GaAs cells are deployed only in the most demanding applications where their features are needed, such as space applications. In this work, GaAs solar cells were studied in a high temperature range within 30–650 ◦ C where their functionality and changes in surface topology were monitored. These changes were recorded using an electron microscope which determined the position of the defects; using an atomic force microscope we determined the roughness of the surface and an infrared camera that showed us the thermal radiated places of the defected parts of the cell. The electrical characteristics of the cells during processing were determined by its current-voltage characteristics. Despite the occurrence of subtle changes on the solar cell with newly created surface features after 300 ◦ C thermal processing, its current-voltage characteristic remained without a significant change.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Photonics, Devices, and Systems VII

ISBN

9781510617032

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

6

Strana od-do

543-548

Název nakladatele

Neuveden

Místo vydání

Neuveden

Místo konání akce

Praha

Datum konání akce

28. 8. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000425429900038