Degradation analysis of GaAs solar cells at thermal stress

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU125867" target="_blank" >RIV/00216305:26220/17:PU125867 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Degradation analysis of GaAs solar cells at thermal stress

Popis výsledku v původním jazyce

The work focuses on the study of the stability of structure and electrical parameters of commercially available photovoltaic cells based on GaAs with Ge substrate. Solar cells of this type are used especially in adverse environments such as space applications, so their working parameters should be stable even under extreme operating conditions. Solar cells were irradiated by focused ion beam (FIB). Artificial defects with different size were created for study of dependence of characteristics on presence of micro and nano defects in structure. Afterwards original and defected solar cells by FIB were studied at different temperatures, ranging from room temperature up to 350 °C. Changes of electrical characteristics of the cells were recorded in the form of noise measurements for examination of distinctions in the pn-junction and in the form of current-voltage characteristics in light and dark for comparison of the cells performance. Infrared camera showed the thermal irradiation of the stressed and d

Název v anglickém jazyce

Degradation analysis of GaAs solar cells at thermal stress

Popis výsledku anglicky

The work focuses on the study of the stability of structure and electrical parameters of commercially available photovoltaic cells based on GaAs with Ge substrate. Solar cells of this type are used especially in adverse environments such as space applications, so their working parameters should be stable even under extreme operating conditions. Solar cells were irradiated by focused ion beam (FIB). Artificial defects with different size were created for study of dependence of characteristics on presence of micro and nano defects in structure. Afterwards original and defected solar cells by FIB were studied at different temperatures, ranging from room temperature up to 350 °C. Changes of electrical characteristics of the cells were recorded in the form of noise measurements for examination of distinctions in the pn-junction and in the form of current-voltage characteristics in light and dark for comparison of the cells performance. Infrared camera showed the thermal irradiation of the stressed and d

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů