CMOS integrated galvanically isolated RF chip-to-chip communication utilizing lateral resonant coupling

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU134689" target="_blank" >RIV/00216305:26220/17:PU134689 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/7969065" target="_blank" >https://ieeexplore.ieee.org/document/7969065</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/RFIC.2017.7969065" target="_blank" >10.1109/RFIC.2017.7969065</a>

Jazyk výsledku

angličtina

Název v původním jazyce

CMOS integrated galvanically isolated RF chip-to-chip communication utilizing lateral resonant coupling

Popis výsledku v původním jazyce

In this work, a high voltage (HV) galvanically isolated chip-to-chip communication circuit utilizing laterally coupled resonators is reported. The adjacently placed resonators provide high voltage galvanic isolation (GI) using horizontal space between resonators filled with oxide, which minimizes the need for thick inter-metal dielectrics. A previously unexplored application for lateral coupling is introduced as a passive communication channel for GIs. Magnetic coupling between resonators is used to transfer an upconverted digitally-modulated OOK control signal at 2.8 GHz through the galvanic isolator. This proposed method can be integrated using CMOS processes, without altering the native process or adding extra fabrication steps. The system is realized in a 0.25 μm BCD (Bipolar-CMOS-DMOS) process with only four metal layers for proof of concept. The design does not require exotic packaging and provides 3.3 kV RMS isolation, small physical area of 0.95 mm 2 , and sub-20 ns propagation delay. The implemented resonators inherently act as bandpass filters, thus enhancing circuit noise immunity to common mode transients.

Název v anglickém jazyce

CMOS integrated galvanically isolated RF chip-to-chip communication utilizing lateral resonant coupling

Popis výsledku anglicky

In this work, a high voltage (HV) galvanically isolated chip-to-chip communication circuit utilizing laterally coupled resonators is reported. The adjacently placed resonators provide high voltage galvanic isolation (GI) using horizontal space between resonators filled with oxide, which minimizes the need for thick inter-metal dielectrics. A previously unexplored application for lateral coupling is introduced as a passive communication channel for GIs. Magnetic coupling between resonators is used to transfer an upconverted digitally-modulated OOK control signal at 2.8 GHz through the galvanic isolator. This proposed method can be integrated using CMOS processes, without altering the native process or adding extra fabrication steps. The system is realized in a 0.25 μm BCD (Bipolar-CMOS-DMOS) process with only four metal layers for proof of concept. The design does not require exotic packaging and provides 3.3 kV RMS isolation, small physical area of 0.95 mm 2 , and sub-20 ns propagation delay. The implemented resonators inherently act as bandpass filters, thus enhancing circuit noise immunity to common mode transients.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

ISBN

978-1-5090-4626-3

ISSN

—

e-ISSN

—

Počet stran výsledku

4

Strana od-do

252-255

Název nakladatele

IEEE

Místo vydání

Piscataway

Místo konání akce

Honolulu

Datum konání akce

4. 6. 2017

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000426956400064