CMOS Bi-directional Ultra-wideband Galvanically Isolated Die-to-die Communication Utilizing a Double-isolated Transformer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU134690" target="_blank" >RIV/00216305:26220/18:PU134690 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/8393609" target="_blank" >https://ieeexplore.ieee.org/document/8393609</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ISPSD.2018.8393609" target="_blank" >10.1109/ISPSD.2018.8393609</a>

Jazyk výsledku

angličtina

Název v původním jazyce

CMOS Bi-directional Ultra-wideband Galvanically Isolated Die-to-die Communication Utilizing a Double-isolated Transformer

Popis výsledku v původním jazyce

In this work, an ultra-wideband (UWB) bi-directional galvanic isolator (BDGI) is reported for the first time. The proposed design methodology uses time-division-duplex (TDD) protocol to merge the functionality of two passive galvanically isolated channels into one magnetically coupled communication channel between two chips, enabling up to 50% form-factor and assembly cost reduction while achieving state-of-art performance. A low-power UWB pulse polarity-modulated transceiver architecture is presented to maximize the channel's capacity to 300 Mb/s and minimize power consumption and propagation delay to 200 pj/b and 5 ns respectively. The communication channel utilizes a double-isolated transformer coupled channel consisting of two transformers connected in series using bondwires and achieves 11 kVpk (7.8 kVrms) high voltage isolation, the highest reported without adding extra steps or alternating the native CMOS fabrication process. The system is realized in a 0.25 um BCD (Bipolar-CMOS-DMOS) process with 0.8 mm 2 silicon area per channel. The system uses odd-symmetry center-tapped transformers and differential transceivers to increase noise/transient immunity.

Název v anglickém jazyce

CMOS Bi-directional Ultra-wideband Galvanically Isolated Die-to-die Communication Utilizing a Double-isolated Transformer

Popis výsledku anglicky

In this work, an ultra-wideband (UWB) bi-directional galvanic isolator (BDGI) is reported for the first time. The proposed design methodology uses time-division-duplex (TDD) protocol to merge the functionality of two passive galvanically isolated channels into one magnetically coupled communication channel between two chips, enabling up to 50% form-factor and assembly cost reduction while achieving state-of-art performance. A low-power UWB pulse polarity-modulated transceiver architecture is presented to maximize the channel's capacity to 300 Mb/s and minimize power consumption and propagation delay to 200 pj/b and 5 ns respectively. The communication channel utilizes a double-isolated transformer coupled channel consisting of two transformers connected in series using bondwires and achieves 11 kVpk (7.8 kVrms) high voltage isolation, the highest reported without adding extra steps or alternating the native CMOS fabrication process. The system is realized in a 0.25 um BCD (Bipolar-CMOS-DMOS) process with 0.8 mm 2 silicon area per channel. The system uses odd-symmetry center-tapped transformers and differential transceivers to increase noise/transient immunity.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018

ISBN

978-1-5386-2927-7

ISSN

—

e-ISSN

—

Počet stran výsledku

4

Strana od-do

88-91

Název nakladatele

IEEE

Místo vydání

Piscataway

Místo konání akce

Chicago

Datum konání akce

13. 4. 2018

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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