A 650 kV/mu s Common-Mode Resilient CMOS Galvanically Isolated Communication System

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F22%3APU147389" target="_blank" >RIV/00216305:26220/22:PU147389 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9626774" target="_blank" >https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9626774</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TCSI.2021.3124554" target="_blank" >10.1109/TCSI.2021.3124554</a>

Jazyk výsledku

angličtina

Název v původním jazyce

A 650 kV/mu s Common-Mode Resilient CMOS Galvanically Isolated Communication System

Popis výsledku v původním jazyce

This work presents a galvanically isolated chip-to-chip communication system that utilizes laterally coupled resonators in combination with a new differential full-wave receiver architecture. Lateral resonant coupling increases the isolation capability and significantly minimizes the intra-chip coupling capacitance of galvanic isolators beyond the limits of vertical coupling in standard CMOS. The presented system marries the merits of a laterally resonant coupled channel with a source-gate coupled low-power, low-latency RF detector architecture that enables high common-mode and differential noise immunity. A center-tapped transformer is used as the interface between the proposed fully differential receiver and the communication channel to further enhance the common-mode transient immunity (CMTI). The proposed system is integrated in a 0.25 mu m CMOS process with four metal layers and does not alter the native process or necessitate additional fabrication steps. The design does not require exotic packaging and achieves state-of-art CMTI of 650 kV/mu s at 5 kVpk isolation, sub-20ns propagation delay, and maintains a small form-factor of 0.95 mm(2). The GI system exhibits robust performance to fabrication variations, with less than +/- 0.3% and +/- 8% sensitivity to process variation and post-assembly chip distance offset, respectively.

Název v anglickém jazyce

A 650 kV/mu s Common-Mode Resilient CMOS Galvanically Isolated Communication System

Popis výsledku anglicky

This work presents a galvanically isolated chip-to-chip communication system that utilizes laterally coupled resonators in combination with a new differential full-wave receiver architecture. Lateral resonant coupling increases the isolation capability and significantly minimizes the intra-chip coupling capacitance of galvanic isolators beyond the limits of vertical coupling in standard CMOS. The presented system marries the merits of a laterally resonant coupled channel with a source-gate coupled low-power, low-latency RF detector architecture that enables high common-mode and differential noise immunity. A center-tapped transformer is used as the interface between the proposed fully differential receiver and the communication channel to further enhance the common-mode transient immunity (CMTI). The proposed system is integrated in a 0.25 mu m CMOS process with four metal layers and does not alter the native process or necessitate additional fabrication steps. The design does not require exotic packaging and achieves state-of-art CMTI of 650 kV/mu s at 5 kVpk isolation, sub-20ns propagation delay, and maintains a small form-factor of 0.95 mm(2). The GI system exhibits robust performance to fabrication variations, with less than +/- 0.3% and +/- 8% sensitivity to process variation and post-assembly chip distance offset, respectively.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20200 - Electrical engineering, Electronic engineering, Information engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

ISSN

1549-8328

e-ISSN

1558-0806

Svazek periodika

69

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

12

Strana od-do

587-598

Kód UT WoS článku

000732244000001

EID výsledku v databázi Scopus

2-s2.0-85120578260