Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU127578" target="_blank" >RIV/00216305:26220/18:PU127578 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1134/S1063739718020026" target="_blank" >http://dx.doi.org/10.1134/S1063739718020026</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1134/S1063739718020026" target="_blank" >10.1134/S1063739718020026</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Popis výsledku v původním jazyce

In this work aluminum nitride (AlN) thin films were deposited by atomic layer deposition (ALD) technique using tris(diethylamido)aluminum (III) (TDEAA) with ammonia (NH3) or hydrazine (N2H4). Two different nitrogen sources were used to conduct comparative study AlN ALD using TDEAA/NH3 and TDEAA/N2H4. For these two systems, deposition was carried out at rector temperatures between 150 to 290 °C. In situ quartz crystal microbalance (QCM) measurements conducted between 160 to 225 °C suggested that surface reactions between TDEAA and NH3 or N2H 4 are self-limiting. At all examined temperatures hydrazine needed smaller doses to reach saturation than ammonia. Ex situ thin film analysis techniques such as x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS), and forward recoil spectroscopy (FReS) were used to examine resulted films. The optimal deposition temperature for both systems were found to be between 200 to 225 °C where highest films density and rate of growth was found. At the same temperature conditions, films deposited using N2H4 exhibited higher films density and higher oxidation resistant, compare to the films deposited using NH3. Elemental analysis of the balk of the film deposited at 225 °C with N2H4 showed a small amount of carbon ~ 1.8 at. % and ~ 3.9 at. % of oxygen. FReS analysis of AlN films deposited with NH3 and N2H4 indicated presence of ~ 25 at. % of hydrogen. This hydrogen believe to be present in the deposited films as unreacted methyl, amine (-NH) and/or amide (-NH2) groups which could be potentially removed by annealing. Overall, N2H4 showed more favorable surface chemistry for AlN ALD compare to NH3 film with higher density and lower sensitivity to oxidation.

Název v anglickém jazyce

Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Popis výsledku anglicky

In this work aluminum nitride (AlN) thin films were deposited by atomic layer deposition (ALD) technique using tris(diethylamido)aluminum (III) (TDEAA) with ammonia (NH3) or hydrazine (N2H4). Two different nitrogen sources were used to conduct comparative study AlN ALD using TDEAA/NH3 and TDEAA/N2H4. For these two systems, deposition was carried out at rector temperatures between 150 to 290 °C. In situ quartz crystal microbalance (QCM) measurements conducted between 160 to 225 °C suggested that surface reactions between TDEAA and NH3 or N2H 4 are self-limiting. At all examined temperatures hydrazine needed smaller doses to reach saturation than ammonia. Ex situ thin film analysis techniques such as x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS), and forward recoil spectroscopy (FReS) were used to examine resulted films. The optimal deposition temperature for both systems were found to be between 200 to 225 °C where highest films density and rate of growth was found. At the same temperature conditions, films deposited using N2H4 exhibited higher films density and higher oxidation resistant, compare to the films deposited using NH3. Elemental analysis of the balk of the film deposited at 225 °C with N2H4 showed a small amount of carbon ~ 1.8 at. % and ~ 3.9 at. % of oxygen. FReS analysis of AlN films deposited with NH3 and N2H4 indicated presence of ~ 25 at. % of hydrogen. This hydrogen believe to be present in the deposited films as unreacted methyl, amine (-NH) and/or amide (-NH2) groups which could be potentially removed by annealing. Overall, N2H4 showed more favorable surface chemistry for AlN ALD compare to NH3 film with higher density and lower sensitivity to oxidation.

Druh

J_SC - Článek v periodiku v databázi SCOPUS

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Russian Microelectronics

ISSN

1063-7397

e-ISSN

1608-3415

Svazek periodika

47

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

RU - Ruská federace

Počet stran výsledku

13

Strana od-do

118-130

Kód UT WoS článku

—

EID výsledku v databázi Scopus

2-s2.0-85044930196