Alternative approaches for preparation of AlN nanolayers by atomic layer deposition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F21%3APU143107" target="_blank" >RIV/00216305:26220/21:PU143107 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Alternative approaches for preparation of AlN nanolayers by atomic layer deposition

Popis výsledku v původním jazyce

Aluminum nitride (AlN) is a promising semi-conductive material with a wide band gap. Thin films of AlN find implementation in a variety of electronic and optoelectronic devices. First and foremost, the aim of the research presented within the scope of this dissertation is to introduce new precursors into ALD process for deposition of AlN thin films. The proposed precursors are superior to traditional ones either in cost-efficiency or reactivity. A part of the dissertation is devoted to enhancement of the understanding of chemical processes which take place during and after deposition. In this regard, a working solution to improving the chemical composition of the resulting films, as well as ameliorating deficiencies, for instance, oxidization, has been proposed. Another important aspect of this study has to do with a thorough analysis of hydrogen phenomenon in AlN ALD thin films. Hydrogen impurities have been investigated with the use of accurate and advanced techniques belonging to ion-beam analysis

Název v anglickém jazyce

Alternative approaches for preparation of AlN nanolayers by atomic layer deposition

Popis výsledku anglicky

Aluminum nitride (AlN) is a promising semi-conductive material with a wide band gap. Thin films of AlN find implementation in a variety of electronic and optoelectronic devices. First and foremost, the aim of the research presented within the scope of this dissertation is to introduce new precursors into ALD process for deposition of AlN thin films. The proposed precursors are superior to traditional ones either in cost-efficiency or reactivity. A part of the dissertation is devoted to enhancement of the understanding of chemical processes which take place during and after deposition. In this regard, a working solution to improving the chemical composition of the resulting films, as well as ameliorating deficiencies, for instance, oxidization, has been proposed. Another important aspect of this study has to do with a thorough analysis of hydrogen phenomenon in AlN ALD thin films. Hydrogen impurities have been investigated with the use of accurate and advanced techniques belonging to ion-beam analysis

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů