Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F21%3APU141413" target="_blank" >RIV/00216305:26220/21:PU141413 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0042207X21004826?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0042207X21004826?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2021.110533" target="_blank" >10.1016/j.vacuum.2021.110533</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

Popis výsledku v původním jazyce

Hydrogen impregnation is one of the main sources of contamination in AlN thin films obtained by atomic layer deposition method (ALD) as many studies report. Such impurities can be potentially detrimental to mechanical and electrical properties of the material. In this study methods belonging to ion-beam analysis (IBA) group, namely: elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA) and secondary-ion mass spectrometry (SIMS) were utilized to examine AlN thin films obtained by plasma-enhanced atomic layer deposition (PE-ALD) with use of trimethylaluminium (TMA) and N2+H2 gas mixture as precursors. Several depositions of AlN layers were carried out with different values of N2+H2 flux intensity (20, 100, 150 sccm) and TMA pulse (0.06, 0.12, 0.15 s) in order to investigate whether such alterations would produce any effect on the resulting films. Data obtained within the scope of this study suggest that AlN grown by PE-ALD exhibit rather low amounts of hydrogen impurities, especially when compared to thermal ALD. Furthermore, the effect of high-temperature treatment in N2 atmosphere was studied and was found out to produce a positive effect on the chemical composition of AlN films.

Název v anglickém jazyce

Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

Popis výsledku anglicky

Hydrogen impregnation is one of the main sources of contamination in AlN thin films obtained by atomic layer deposition method (ALD) as many studies report. Such impurities can be potentially detrimental to mechanical and electrical properties of the material. In this study methods belonging to ion-beam analysis (IBA) group, namely: elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA) and secondary-ion mass spectrometry (SIMS) were utilized to examine AlN thin films obtained by plasma-enhanced atomic layer deposition (PE-ALD) with use of trimethylaluminium (TMA) and N2+H2 gas mixture as precursors. Several depositions of AlN layers were carried out with different values of N2+H2 flux intensity (20, 100, 150 sccm) and TMA pulse (0.06, 0.12, 0.15 s) in order to investigate whether such alterations would produce any effect on the resulting films. Data obtained within the scope of this study suggest that AlN grown by PE-ALD exhibit rather low amounts of hydrogen impurities, especially when compared to thermal ALD. Furthermore, the effect of high-temperature treatment in N2 atmosphere was studied and was found out to produce a positive effect on the chemical composition of AlN films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

—

Svazek periodika

193

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

000702762500004

EID výsledku v databázi Scopus

2-s2.0-85112834158