Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU135587" target="_blank" >RIV/00216305:26220/20:PU135587 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S2452321620302195" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2452321620302195</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.prostr.2020.01.152" target="_blank" >10.1016/j.prostr.2020.01.152</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

Popis výsledku v původním jazyce

This study focuses on structural imperfections caused by hydrogen impurities in AlN thin films obtained using atomic layer deposition method (ALD). Currently, there is a severe lack of studies regarding the presence of hydrogen in the bulk of AlN films. Fourier-transform infrared spectroscopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydrogen. Hydrogen is known to be a frequent contaminant in AlN films grown by ALD method, it may form different bonds with nitrogen, e.g. amino (–NH2) or imide (–NH) groups, which impair the quality of the resulting film. Which is why, it is important to investigate the phenomenon of hydrogen as well as to search for the suitable methods to eliminate or at least reduce its quantity. In this work several samples have been prepared using different precursors, substrates and deposition parameters and characterized using FTIR and additional techniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films.

Název v anglickém jazyce

Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

Popis výsledku anglicky

This study focuses on structural imperfections caused by hydrogen impurities in AlN thin films obtained using atomic layer deposition method (ALD). Currently, there is a severe lack of studies regarding the presence of hydrogen in the bulk of AlN films. Fourier-transform infrared spectroscopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydrogen. Hydrogen is known to be a frequent contaminant in AlN films grown by ALD method, it may form different bonds with nitrogen, e.g. amino (–NH2) or imide (–NH) groups, which impair the quality of the resulting film. Which is why, it is important to investigate the phenomenon of hydrogen as well as to search for the suitable methods to eliminate or at least reduce its quantity. In this work several samples have been prepared using different precursors, substrates and deposition parameters and characterized using FTIR and additional techniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Procedia Structural Integrity

ISBN

978-80-214-5760-7

ISSN

2452-3216

e-ISSN

—

Počet stran výsledku

6

Strana od-do

601-606

Název nakladatele

Elsevier

Místo vydání

Neuveden

Místo konání akce

Brno

Datum konání akce

26. 6. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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