STRUCTURAL CHARACHTERIZATION OF ALN THIN FILMS OBTAINED ON SILICON SURFACE BY PE-ALD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU137295" target="_blank" >RIV/00216305:26220/20:PU137295 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.fekt.vut.cz/conf/EEICT/archiv/sborniky/EEICT_2020_sbornik_2.pdf" target="_blank" >https://www.fekt.vut.cz/conf/EEICT/archiv/sborniky/EEICT_2020_sbornik_2.pdf</a>

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

STRUCTURAL CHARACHTERIZATION OF ALN THIN FILMS OBTAINED ON SILICON SURFACE BY PE-ALD

Popis výsledku v původním jazyce

The aim of this study is to investigate the hydrogen impregnations in AlN thin films deposited using plasma-enhanced atomic layer deposition technique. As of date, there is an apparent gap in the literature regarding the matter of hydrogen impregnation within the AlN layers. Hydrogen is a frequent contaminant and its content has detrimental effect on the quality of resulted layer, which is why it is relevant to investigate this particular contaminant and try to eliminate or at least minimize its quantity. Within the films hydrogen commonly forms amino or imide types of bonds (–NH 2 , -NH). There is only a handful of analytical methods enabling the detection of hydrogen. This particular study comprises two of them – Fourier-transform infrared spectroscopy (FTIR) and second ion-mass spectrometry (SIMS). XPS analysis has also been included to examine the surface nature and structural imperfections of the grown layer.

Název v anglickém jazyce

STRUCTURAL CHARACHTERIZATION OF ALN THIN FILMS OBTAINED ON SILICON SURFACE BY PE-ALD

Popis výsledku anglicky

The aim of this study is to investigate the hydrogen impregnations in AlN thin films deposited using plasma-enhanced atomic layer deposition technique. As of date, there is an apparent gap in the literature regarding the matter of hydrogen impregnation within the AlN layers. Hydrogen is a frequent contaminant and its content has detrimental effect on the quality of resulted layer, which is why it is relevant to investigate this particular contaminant and try to eliminate or at least minimize its quantity. Within the films hydrogen commonly forms amino or imide types of bonds (–NH 2 , -NH). There is only a handful of analytical methods enabling the detection of hydrogen. This particular study comprises two of them – Fourier-transform infrared spectroscopy (FTIR) and second ion-mass spectrometry (SIMS). XPS analysis has also been included to examine the surface nature and structural imperfections of the grown layer.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 26th Conference STUDENT EEICT 2020

ISBN

978-80-214-5868-0

ISSN

—

e-ISSN

—

Počet stran výsledku

6

Strana od-do

197-202

Název nakladatele

Neuveden

Místo vydání

neuveden

Místo konání akce

BRNO

Datum konání akce

23. 4. 2020

Typ akce podle státní příslušnosti

CST - Celostátní akce

Kód UT WoS článku

000598376500045