Effect of gamma radiation on properties and performance of GaAs based solar cells
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU136632" target="_blank" >RIV/00216305:26220/20:PU136632 - isvavai.cz</a>
Výsledek na webu
<a href="https://www.sciencedirect.com/science/article/pii/S0169433220315233" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433220315233</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2020.146766" target="_blank" >10.1016/j.apsusc.2020.146766</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Effect of gamma radiation on properties and performance of GaAs based solar cells
Popis výsledku v původním jazyce
The structure and properties of gallium arsenide photovoltaic cells were investigated using a wide range of analytical methods. Solar cells were exposed to intense gamma irradiation with a dose of 500 kGy. The radioactive isotope Cobalt-60 was used as the emitter. Fourier transform infrared spectroscopy (FTIR), ellipsometry, and spectrophotometry were used as optical measurement methods for observing the shift of permittivity, reflectance, and other surface investigation. Changes in thin-film composition were also analyzed by secondary-ion mass spectrometry (SIMS) by surface sputtering. Electrical characteristics were also observed. Minority carrier properties, junctions, or defects in semiconductor were investigated by scanning electron microscopy (SEM) with electron beam-induced current method (EBIC). Complementarily was proved diffusion of metals into thin layers of GaAs structure. This phenomenon affects the overall performance of the solar cell.
Název v anglickém jazyce
Effect of gamma radiation on properties and performance of GaAs based solar cells
Popis výsledku anglicky
The structure and properties of gallium arsenide photovoltaic cells were investigated using a wide range of analytical methods. Solar cells were exposed to intense gamma irradiation with a dose of 500 kGy. The radioactive isotope Cobalt-60 was used as the emitter. Fourier transform infrared spectroscopy (FTIR), ellipsometry, and spectrophotometry were used as optical measurement methods for observing the shift of permittivity, reflectance, and other surface investigation. Changes in thin-film composition were also analyzed by secondary-ion mass spectrometry (SIMS) by surface sputtering. Electrical characteristics were also observed. Minority carrier properties, junctions, or defects in semiconductor were investigated by scanning electron microscopy (SEM) with electron beam-induced current method (EBIC). Complementarily was proved diffusion of metals into thin layers of GaAs structure. This phenomenon affects the overall performance of the solar cell.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20501 - Materials engineering
Návaznosti výsledku
Projekt
<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Applied Surface Science
ISSN
0169-4332
e-ISSN
1873-5584
Svazek periodika
527
Číslo periodika v rámci svazku
146766
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
11
Strana od-do
135-146
Kód UT WoS článku
000564201200006
EID výsledku v databázi Scopus
2-s2.0-85086576687