Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F20%3APU140185" target="_blank" >RIV/00216305:26220/20:PU140185 - isvavai.cz</a>

Výsledek na webu

<a href="https://dl.asminternational.org/istfa/proceedings-abstract/ISTFA2020/83348/17/15398" target="_blank" >https://dl.asminternational.org/istfa/proceedings-abstract/ISTFA2020/83348/17/15398</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks

Popis výsledku v původním jazyce

As the semiconductor industry demands higher throughput for failure analysis, there is a constant need to rapidly speed up the sample preparation workflows. Here we present extended capabilities of the standard Xe plasma Focused Ion Beam failure analysis workflows by implementing a standalone laser ablation tool. Time-to-sample advantages of such workflow is shown on four distinct applications: cross-sectioning of a large solder ball, cross-sectioning of a deeply buried wire bond, cross-sectioning of the device layer of an OLED display, and removing the MEMS silicon cap to access underlying structures. In all of these workflows we have shown significant decrease in required process time while altogether avoiding the disadvantages of corresponding mechanical and chemical methods.

Název v anglickém jazyce

Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks

Popis výsledku anglicky

As the semiconductor industry demands higher throughput for failure analysis, there is a constant need to rapidly speed up the sample preparation workflows. Here we present extended capabilities of the standard Xe plasma Focused Ion Beam failure analysis workflows by implementing a standalone laser ablation tool. Time-to-sample advantages of such workflow is shown on four distinct applications: cross-sectioning of a large solder ball, cross-sectioning of a deeply buried wire bond, cross-sectioning of the device layer of an OLED display, and removing the MEMS silicon cap to access underlying structures. In all of these workflows we have shown significant decrease in required process time while altogether avoiding the disadvantages of corresponding mechanical and chemical methods.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů