How to achieve artefact-free FIB milling on polyimide packages

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F01733214%3A_____%2F16%3AN0000005" target="_blank" >RIV/01733214:_____/16:N0000005 - isvavai.cz</a>

Výsledek na webu

<a href="https://asm.confex.com/asm/istfa16/webprogram/Paper42339.html" target="_blank" >https://asm.confex.com/asm/istfa16/webprogram/Paper42339.html</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

How to achieve artefact-free FIB milling on polyimide packages

Popis výsledku v původním jazyce

The Focused Ion Beam (FIB) and the Scanning Electron Microscopy (SEM) are essential techniques for failure analysis of microelectronic devices. FIB is used for cross-sectioning the sample by ion milling and SEM is used for high resolution imaging of resulting cross sections, for charge compensation, or as a source of electrons for other analytical techniques. Two parameters of the cross-sectioning are crucial – the fast milling rate and the high quality of the surface, with no damage or artefacts obstructing the failure analysis process. The cross section quality is usually improved by polishing it from several directions, which have been demonstrated on large Through Silicon Vias (TSV) samples to mitigate the curtaining effect. Unfortunately this method makes cross-sectioning more difficult and less accurate. To overcome this drawback, an improved method has been developed by using multi-tilt sample stage (so-called Rocking stage). It allows an additional tilting also in the plane of the cross section which enables SEM observation of the process simultaneously. The workflow will be described in detail (mask fabrication, nanomanipulator tip attachment, sample placement, FIB cross section) and the comparison to classical approach by Ga FIB will be shown.

Název v anglickém jazyce

How to achieve artefact-free FIB milling on polyimide packages

Popis výsledku anglicky

The Focused Ion Beam (FIB) and the Scanning Electron Microscopy (SEM) are essential techniques for failure analysis of microelectronic devices. FIB is used for cross-sectioning the sample by ion milling and SEM is used for high resolution imaging of resulting cross sections, for charge compensation, or as a source of electrons for other analytical techniques. Two parameters of the cross-sectioning are crucial – the fast milling rate and the high quality of the surface, with no damage or artefacts obstructing the failure analysis process. The cross section quality is usually improved by polishing it from several directions, which have been demonstrated on large Through Silicon Vias (TSV) samples to mitigate the curtaining effect. Unfortunately this method makes cross-sectioning more difficult and less accurate. To overcome this drawback, an improved method has been developed by using multi-tilt sample stage (so-called Rocking stage). It allows an additional tilting also in the plane of the cross section which enables SEM observation of the process simultaneously. The workflow will be described in detail (mask fabrication, nanomanipulator tip attachment, sample placement, FIB cross section) and the comparison to classical approach by Ga FIB will be shown.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/TE01020233" target="_blank" >TE01020233: Platforma pokročilých mikroskopických a spektroskopických technik pro nano a mikrotechnologie</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

ISTFA 2016: Proceedings of the 42nd International Symposium for Testing and Failure Analysis

ISBN

9781627081351

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

“nestrankovano”

Název nakladatele

ASM International

Místo vydání

Fort Worth

Místo konání akce

Fort Worth

Datum konání akce

1. 1. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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