Identification of Power BJT Operating Stages Based on Experimental Excess Charge Estimation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F21%3APU140928" target="_blank" >RIV/00216305:26220/21:PU140928 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/9432605" target="_blank" >https://ieeexplore.ieee.org/document/9432605</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/PEMC48073.2021.9432605" target="_blank" >10.1109/PEMC48073.2021.9432605</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Identification of Power BJT Operating Stages Based on Experimental Excess Charge Estimation

Popis výsledku v původním jazyce

The paper proposes and demonstrates an experimental waz of estimating the amount of stored charge of excess minority carriers within power BJT base and collector. This consequently allows a detailed identification of transistor operating stage. A brief device operation analysis is provided as a clear support of the measured characteristics. The method is based on determining the steadz-state stored charge at various operating conditions by integration of negative transient base current during turn-off event which deflates the stored charge. An ultimate objective of these and future experiments is an accurate interpretation and modelling of various device stages during IGBT switching process. Most of the observed phenomenons are common among a power BJT and IGBT's intrinsic BJT. As IGBT doesn't provide access to the internal base current, it is advantegous to measure and interpret the relations between stored charge and switching waveforms of power BJT first and further generalize the observations to IGBT measurements.

Název v anglickém jazyce

Identification of Power BJT Operating Stages Based on Experimental Excess Charge Estimation

Popis výsledku anglicky

The paper proposes and demonstrates an experimental waz of estimating the amount of stored charge of excess minority carriers within power BJT base and collector. This consequently allows a detailed identification of transistor operating stage. A brief device operation analysis is provided as a clear support of the measured characteristics. The method is based on determining the steadz-state stored charge at various operating conditions by integration of negative transient base current during turn-off event which deflates the stored charge. An ultimate objective of these and future experiments is an accurate interpretation and modelling of various device stages during IGBT switching process. Most of the observed phenomenons are common among a power BJT and IGBT's intrinsic BJT. As IGBT doesn't provide access to the internal base current, it is advantegous to measure and interpret the relations between stored charge and switching waveforms of power BJT first and further generalize the observations to IGBT measurements.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)

ISBN

978-1-7281-5660-6

ISSN

2473-0165

e-ISSN

—

Počet stran výsledku

7

Strana od-do

615-621

Název nakladatele

IEEE

Místo vydání

Gliwice, Poland

Místo konání akce

Gliwice

Datum konání akce

20. 9. 2020

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000723843000087