Development of 3D on-chip capacitor based on high-κ dielectric

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F21%3APU142833" target="_blank" >RIV/00216305:26220/21:PU142833 - isvavai.cz</a>

Výsledek na webu

<a href="https://passive-components.eu/development-of-3d-on-chip-capacitor-based-on-high-k-dielectric/" target="_blank" >https://passive-components.eu/development-of-3d-on-chip-capacitor-based-on-high-k-dielectric/</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Development of 3D on-chip capacitor based on high-κ dielectric

Popis výsledku v původním jazyce

The high-κ dielectric materials are commonly used in microelectronic components due to technological necessity of increasing the permittivity of dielectric layers. The thickness of the layer is crucial parameter of this technology because it has significant influence on the dielectric properties, capacitance density, leakage current density-voltage (J-V), and capacitance density-voltage (C-V) characteristics. Among metal oxide compounds, HfO2 and Al2O3 have been widely studied due to their good thermodynamic stability in contact with silicon. The devices have been fabricated by ALD processes on Si wafer. Properties of HfO2/Al2O3-based dielectric as on-chip MIS capacitors were studied. The capacitance density, C-V and impedance characteristics, and leakage current were measured. The equivalent dielectric constant, capacitance density, breakdown voltage and leakage current are studied on stacks (HfO2/Al2O3) in ration of 1:1. The experimental results indicate very good leakage current and good breakdown

Název v anglickém jazyce

Development of 3D on-chip capacitor based on high-κ dielectric

Popis výsledku anglicky

The high-κ dielectric materials are commonly used in microelectronic components due to technological necessity of increasing the permittivity of dielectric layers. The thickness of the layer is crucial parameter of this technology because it has significant influence on the dielectric properties, capacitance density, leakage current density-voltage (J-V), and capacitance density-voltage (C-V) characteristics. Among metal oxide compounds, HfO2 and Al2O3 have been widely studied due to their good thermodynamic stability in contact with silicon. The devices have been fabricated by ALD processes on Si wafer. Properties of HfO2/Al2O3-based dielectric as on-chip MIS capacitors were studied. The capacitance density, C-V and impedance characteristics, and leakage current were measured. The equivalent dielectric constant, capacitance density, breakdown voltage and leakage current are studied on stacks (HfO2/Al2O3) in ration of 1:1. The experimental results indicate very good leakage current and good breakdown

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

21002 - Nano-processes (applications on nano-scale); (biomaterials to be 2.9)

Projekt

<a href="/cs/project/GA17-27340S" target="_blank" >GA17-27340S: Uchovávání energie na čipu pro autonomní senzorové pole (CAPoC)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů