The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F23%3APU148601" target="_blank" >RIV/00216305:26620/23:PU148601 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.tandfonline.com/doi/full/10.1080/14686996.2022.2162324" target="_blank" >https://www.tandfonline.com/doi/full/10.1080/14686996.2022.2162324</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1080/14686996.2022.2162324" target="_blank" >10.1080/14686996.2022.2162324</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration

Popis výsledku v původním jazyce

The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO2 nanorods self-embedded into the nanoporous Al2O3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95-480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF center dot cm(-2), the loss tangent of 4 center dot 10(-3) at frequencies up to 1 MHz, the leakage current density of 40 pA center dot cm(-2), the breakdown field strength of up to 10 MV center dot cm(-1), the energy density of 100 J center dot cm(-3), the quadratic voltage coefficient of capacitance of 4 ppm center dot V-2, and the temperature coefficient of capacitance of 480 ppm center dot K-1 at 293-423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors' characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices.

Název v anglickém jazyce

The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration

Popis výsledku anglicky

The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO2 nanorods self-embedded into the nanoporous Al2O3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95-480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF center dot cm(-2), the loss tangent of 4 center dot 10(-3) at frequencies up to 1 MHz, the leakage current density of 40 pA center dot cm(-2), the breakdown field strength of up to 10 MV center dot cm(-1), the energy density of 100 J center dot cm(-3), the quadratic voltage coefficient of capacitance of 4 ppm center dot V-2, and the temperature coefficient of capacitance of 480 ppm center dot K-1 at 293-423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors' characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20500 - Materials engineering

Projekt

<a href="/cs/project/GA20-25486S" target="_blank" >GA20-25486S: Anodická oxidace superponovaných kovových vrstev: od nanostrukturovaných polovodičů k nanokompozitním dielektrikům</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Science and Technology of Advanced Materials

ISSN

1468-6996

e-ISSN

1878-5514

Svazek periodika

24

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

17

Strana od-do

1-17

Kód UT WoS článku

000934349300001

EID výsledku v databázi Scopus

2-s2.0-85148329765