Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F22%3APU146229" target="_blank" >RIV/00216305:26220/22:PU146229 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S2352492822015057?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2352492822015057?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mtcomm.2022.104664" target="_blank" >10.1016/j.mtcomm.2022.104664</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates

Popis výsledku v původním jazyce

High-kappa dielectric materials are commonly used in microelectronic components due to the technological necessity of increasing the capacitance density of dielectric layers. The thickness of the layer is a crucial parameter of this technology because it has a significant influence on dielectric properties, capacitance density, leakage current density-voltage (J-V), breakdown voltage, and capacitance density-voltage (C-V). Among metal oxide compounds, HfO2 and Al2O3 have been widely studied due to their good thermodynamic stability in contact with silicon. Thus, in this study, devices are fabricated by atomic layer deposition (ALD) processes on Si wafer. Properties of HfO2/Al2O3-based stack dielectric as on-chip MIS capacitors are investigated. The capacitance density, C-V, J-V, impedance characteristics, equivalent dielectric constant, breakdown voltage, and leakage current are studied on stacks (HfO2/Al2O3) with a thickness ratio of 1:1. The experimental results indicate very good leakage current and good breakdown voltage. Oxygen vacancies play a significant role in increasing the conductance and contrarily decreasing the equivalent dielectric constant of the stack.

Název v anglickém jazyce

Comparison of on-chip MIS capacitors based on stacked HfO2/Al2O3 nanolaminates

Popis výsledku anglicky

High-kappa dielectric materials are commonly used in microelectronic components due to the technological necessity of increasing the capacitance density of dielectric layers. The thickness of the layer is a crucial parameter of this technology because it has a significant influence on dielectric properties, capacitance density, leakage current density-voltage (J-V), breakdown voltage, and capacitance density-voltage (C-V). Among metal oxide compounds, HfO2 and Al2O3 have been widely studied due to their good thermodynamic stability in contact with silicon. Thus, in this study, devices are fabricated by atomic layer deposition (ALD) processes on Si wafer. Properties of HfO2/Al2O3-based stack dielectric as on-chip MIS capacitors are investigated. The capacitance density, C-V, J-V, impedance characteristics, equivalent dielectric constant, breakdown voltage, and leakage current are studied on stacks (HfO2/Al2O3) with a thickness ratio of 1:1. The experimental results indicate very good leakage current and good breakdown voltage. Oxygen vacancies play a significant role in increasing the conductance and contrarily decreasing the equivalent dielectric constant of the stack.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20500 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Today Communications

ISSN

2352-4928

e-ISSN

—

Svazek periodika

33

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

000877596500004

EID výsledku v databázi Scopus

2-s2.0-85140728372