COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F22%3APU146898" target="_blank" >RIV/00216305:26220/22:PU146898 - isvavai.cz</a>

Výsledek na webu

<a href="https://ntrp.vinca.rs/2022_2/Contents2022_2.html" target="_blank" >https://ntrp.vinca.rs/2022_2/Contents2022_2.html</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.2298/NTRP2202128G" target="_blank" >10.2298/NTRP2202128G</a>

Jazyk výsledku

angličtina

Název v původním jazyce

COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

Popis výsledku v původním jazyce

Due to its unique material properties, such as extreme hardness and radiation resistance, silicon carbide has been used as an important construction material for environments with extreme conditions, like those present in nu clear reactors. As such, it is constantly exposed to energetic particles (e. g., neutrons) and consequently subjected to gradual crystal lattice degradation. In this article, the 6H-SiC crystal damage has been simulated by the implantation of 4 MeV C3+ ions in the (0001) axial direction of a single 6H-SiC crystal to the ion fluences of 1.359.10(15) cm(-2), 6.740.10(15) cm(-2), and 2.02.10(16) cm(-2). These implanted samples were subsequently analyzed by Rutherford and elastic backscattering spectrometry in the channeling orientation (RBS/C & EBS/C) by the usage of 1 MeV protons. Obtained spectra were analyzed by channeling simulation phenomenological computer code (CSIM) to obtain quantitative crystal damage depth profiles. The difference between the positions of damage profile maxima obtained by CSIM code and one simulated with stopping and range of ions in matter (SRIM), a Monte Carlo based computer code focused on ion implantation simulation in random crystal direction only, is about 10 %. Therefore, due to small profile depth shifts, the usage of the iterative procedure for calculating crystal damage depth profiles is proposed. It was shown that profiles obtained by iterative procedure show very good agreement with the ones obtained with CSIM code. Addition ally, with the introduction of channeling to random energy loss ratio the energy to depth profile scale conversion, the agreement with CSIM profiles becomes excellent.

Název v anglickém jazyce

COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

Popis výsledku anglicky

Due to its unique material properties, such as extreme hardness and radiation resistance, silicon carbide has been used as an important construction material for environments with extreme conditions, like those present in nu clear reactors. As such, it is constantly exposed to energetic particles (e. g., neutrons) and consequently subjected to gradual crystal lattice degradation. In this article, the 6H-SiC crystal damage has been simulated by the implantation of 4 MeV C3+ ions in the (0001) axial direction of a single 6H-SiC crystal to the ion fluences of 1.359.10(15) cm(-2), 6.740.10(15) cm(-2), and 2.02.10(16) cm(-2). These implanted samples were subsequently analyzed by Rutherford and elastic backscattering spectrometry in the channeling orientation (RBS/C & EBS/C) by the usage of 1 MeV protons. Obtained spectra were analyzed by channeling simulation phenomenological computer code (CSIM) to obtain quantitative crystal damage depth profiles. The difference between the positions of damage profile maxima obtained by CSIM code and one simulated with stopping and range of ions in matter (SRIM), a Monte Carlo based computer code focused on ion implantation simulation in random crystal direction only, is about 10 %. Therefore, due to small profile depth shifts, the usage of the iterative procedure for calculating crystal damage depth profiles is proposed. It was shown that profiles obtained by iterative procedure show very good agreement with the ones obtained with CSIM code. Addition ally, with the introduction of channeling to random energy loss ratio the energy to depth profile scale conversion, the agreement with CSIM profiles becomes excellent.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20305 - Nuclear related engineering; (nuclear physics to be 1.3);

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

NUCL TECHNOL RADIAT

ISSN

1451-3994

e-ISSN

—

Svazek periodika

37

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

RS - Srbská republika

Počet stran výsledku

10

Strana od-do

128-137

Kód UT WoS článku

000896021500006

EID výsledku v databázi Scopus

2-s2.0-85142457236