2D Physical Modelling of Semiconductor Equations for Verification of 1D Lumped-Charge Model of Bipolar Power Devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F23%3APU148902" target="_blank" >RIV/00216305:26220/23:PU148902 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2023_sbornik_2_v2.pdf" target="_blank" >https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2023_sbornik_2_v2.pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.13164/eeict.2023.181" target="_blank" >10.13164/eeict.2023.181</a>

Jazyk výsledku

angličtina

Název v původním jazyce

2D Physical Modelling of Semiconductor Equations for Verification of 1D Lumped-Charge Model of Bipolar Power Devices

Popis výsledku v původním jazyce

The paper demonstrates a finite-element method (FEM) simulation model of semiconductor devices operation. Classical semiconductor equations employing drift, diffusion and generation-recombination transport of charge carriers are established and variational forms for FEM assembly are derived in detail, including a basic voltage and current boundary conditions. Mathematically, a system of mutually coupled nonlinear equations need to be solved, which requires extensive use of nonlinear iteration solver. The derived model was coded in Python by strict use of open source tools, mainly grouped around FEniCSx project. Graphic output figures and characteristics for basic semiconductor structures are presented to demonstrate the functionality of model. An ultimate goal of presented effort is derivation and verification of simplified semi-analytical model of Insulated-gate bipolar transistor (IGBT), including precise transient behavior. This kind of model should be calibrated by use of measurement-obtained data, so the qualitative behavior of device physics at reasonable computational cost is of primary interest of presented FEM model as opposed to commercial device development tools aiming at precise quantitative outputs; which need to be experimentally calibrated even so. As an additional step to simplified one-dimensional model usability verification, results of unusual way of experimental estimation of minority-carrier excess charge within power bipolar transistor collector and base during on-state is presented and compared to simulation result.i

Název v anglickém jazyce

2D Physical Modelling of Semiconductor Equations for Verification of 1D Lumped-Charge Model of Bipolar Power Devices

Popis výsledku anglicky

The paper demonstrates a finite-element method (FEM) simulation model of semiconductor devices operation. Classical semiconductor equations employing drift, diffusion and generation-recombination transport of charge carriers are established and variational forms for FEM assembly are derived in detail, including a basic voltage and current boundary conditions. Mathematically, a system of mutually coupled nonlinear equations need to be solved, which requires extensive use of nonlinear iteration solver. The derived model was coded in Python by strict use of open source tools, mainly grouped around FEniCSx project. Graphic output figures and characteristics for basic semiconductor structures are presented to demonstrate the functionality of model. An ultimate goal of presented effort is derivation and verification of simplified semi-analytical model of Insulated-gate bipolar transistor (IGBT), including precise transient behavior. This kind of model should be calibrated by use of measurement-obtained data, so the qualitative behavior of device physics at reasonable computational cost is of primary interest of presented FEM model as opposed to commercial device development tools aiming at precise quantitative outputs; which need to be experimentally calibrated even so. As an additional step to simplified one-dimensional model usability verification, results of unusual way of experimental estimation of minority-carrier excess charge within power bipolar transistor collector and base during on-state is presented and compared to simulation result.i

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings II of the 29 th Conference STUDENT EEICT 2023 Selected papers

ISBN

978-80-214-6154-3

ISSN

2788-1334

e-ISSN

—

Počet stran výsledku

7

Strana od-do

181-187

Název nakladatele

Brno University of Technology, Faculty of Electrical Engineering and Communication

Místo vydání

Brno, Czech Republic

Místo konání akce

Brno

Datum konání akce

25. 4. 2023

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

—