Graphene removal by water-assisted Focused-Electron-Beam-Induced Etching – unveiling the dose and dwell time impact on etch profile and the topographical changes in SiO2 substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F24%3APU149497" target="_blank" >RIV/00216305:26220/24:PU149497 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-15-18.pdf" target="_blank" >https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-15-18.pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3762/bjnano.15.18" target="_blank" >10.3762/bjnano.15.18</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Graphene removal by water-assisted Focused-Electron-Beam-Induced Etching – unveiling the dose and dwell time impact on etch profile and the topographical changes in SiO2 substrate

Popis výsledku v původním jazyce

Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in the water-assisted process using so-called Focused Electron Beam Induced Etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low values of electron dose < 8 nC/μm2. We demonstrate that graphene etching and topographical changes in SiO2 substrate can be controlled via electron beam parameters such as dwell time and dose.

Název v anglickém jazyce

Graphene removal by water-assisted Focused-Electron-Beam-Induced Etching – unveiling the dose and dwell time impact on etch profile and the topographical changes in SiO2 substrate

Popis výsledku anglicky

Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in the water-assisted process using so-called Focused Electron Beam Induced Etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low values of electron dose < 8 nC/μm2. We demonstrate that graphene etching and topographical changes in SiO2 substrate can be controlled via electron beam parameters such as dwell time and dose.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

<a href="/cs/project/EF16_013%2F0001638" target="_blank" >EF16_013/0001638: Výkonové laboratoře CVVOZE - modernizace výzkumné infrastruktury</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Beilstein Journal of Nanotechnology

ISSN

2190-4286

e-ISSN

—

Svazek periodika

15

Číslo periodika v rámci svazku

neuvedeno

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

9

Strana od-do

190-198

Kód UT WoS článku

001159747400001

EID výsledku v databázi Scopus

2-s2.0-85185410380