Non-epitaxial integration of strain-tuned polycrystalline BiFeO3 thin films for silicon-based optoelectronics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F26%3A0200633" target="_blank" >RIV/00216305:26220/26:0200633 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/abs/pii/S0925346725009371?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/abs/pii/S0925346725009371?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2025.117577" target="_blank" >10.1016/j.optmat.2025.117577</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Non-epitaxial integration of strain-tuned polycrystalline BiFeO3 thin films for silicon-based optoelectronics

Popis výsledku v původním jazyce

Integrating thin bismuth ferrite films with silicon-based platforms offers a promising path for advanced optoelectronic devices. This work investigates how oxygen partial pressure during pulsed laser deposition governs the structure, microstructure, defect chemistry, and optical properties of BiFeO3 films grown on Ti-buffered Si. Diffraction and microscopy confirm single-phase rhombohedral perovskite and indicate that the oxygen background tunes the lattice strain states and vacancy proxies. The lower-pressure film exhibits partial relaxed strain, finer grains, and a smaller oxygen-defect fraction, whereas the moderate-pressure film shows stronger tensile lattice strain, rougher grains, and a higher vacancy level. Spectroscopic ellipsometry results, analyzed with a multilayer model that includes buried Ti and TiOx interlayers, reveals distinct differences in dielectric dispersion and absorption edges. The lower-pressure film displays direct and indirect bandgaps of about 2.61 and 2.25 eV, while the moderate-pressure film shows slightly larger values of about 2.68 and 2.32 eV. These shifts are consistent with coupled variations in strain and oxygen-related disorder that modulate Fe-O bond lengths and hybridization. Overall, the results demonstrate that pressure-controlled strain and defect engineering can tailor light-matter interaction in Si-integrated BiFeO3 films for photonic and optoelectronic applications.

Název v anglickém jazyce

Non-epitaxial integration of strain-tuned polycrystalline BiFeO3 thin films for silicon-based optoelectronics

Popis výsledku anglicky

Integrating thin bismuth ferrite films with silicon-based platforms offers a promising path for advanced optoelectronic devices. This work investigates how oxygen partial pressure during pulsed laser deposition governs the structure, microstructure, defect chemistry, and optical properties of BiFeO3 films grown on Ti-buffered Si. Diffraction and microscopy confirm single-phase rhombohedral perovskite and indicate that the oxygen background tunes the lattice strain states and vacancy proxies. The lower-pressure film exhibits partial relaxed strain, finer grains, and a smaller oxygen-defect fraction, whereas the moderate-pressure film shows stronger tensile lattice strain, rougher grains, and a higher vacancy level. Spectroscopic ellipsometry results, analyzed with a multilayer model that includes buried Ti and TiOx interlayers, reveals distinct differences in dielectric dispersion and absorption edges. The lower-pressure film displays direct and indirect bandgaps of about 2.61 and 2.25 eV, while the moderate-pressure film shows slightly larger values of about 2.68 and 2.32 eV. These shifts are consistent with coupled variations in strain and oxygen-related disorder that modulate Fe-O bond lengths and hybridization. Overall, the results demonstrate that pressure-controlled strain and defect engineering can tailor light-matter interaction in Si-integrated BiFeO3 films for photonic and optoelectronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

—

Rok uplatnění

2026

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical materials

ISSN

0925-3467

e-ISSN

1873-1252

Svazek periodika

169

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

001591437700001

EID výsledku v databázi Scopus

2-s2.0-105017734178