Role of Buffer Layers in Defect Chemistry and Parasitic Phase Formation of BiFeO3 Films on Silicon

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F26%3A0201239" target="_blank" >RIV/00216305:26220/26:0201239 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acsomega.5c08852" target="_blank" >https://pubs.acs.org/doi/10.1021/acsomega.5c08852</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsomega.5c08852" target="_blank" >10.1021/acsomega.5c08852</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Role of Buffer Layers in Defect Chemistry and Parasitic Phase Formation of BiFeO3 Films on Silicon

Popis výsledku v původním jazyce

Achieving the reliable integration of bismuth ferrite with silicon requires precise control over phase formation, cation stoichiometry, and near-surface oxygen chemistry. In this study, BiFeO3 films were deposited by pulsed laser deposition onto Ti- and TiO2-buffered Si substrates under varied oxygen partial pressures and substrate temperatures. Structural, morphological, and chemical evolutions were investigated using X-ray diffraction, scanning electron microscopy, and combined survey and high-resolution X-ray photoelectron spectroscopy. Both buffer types yield polycrystalline BiFeO3 films; Ti-buffered samples exhibit lower variations in Bi/Fe surface ratios, whereas TiO2buffered films show a reduced contribution from hydroxyl-related oxygen species at the surface. X-ray photoelectron spectroscopy confirms that Bi and Fe remain exclusively in the trivalent state under all growth conditions. High-resolution oxygen spectra demonstrate that oxygen chemistry is the most sensitive indicator of near-surface disorder, reflecting contributions from lattice oxygen and surface hydroxylation arising from ambient exposure. Minor Bi2O3 phases persist across the investigated deposition window; however, their evolution, together with surface oxygen trends, indicates that intermediate-to-high substrate temperatures combined with moderate-to-low oxygen pressures provide the most favorable conditions for stabilizing near-stoichiometric BiFeO3. Overall, the results highlight oxide buffer layers as effective regulators of surface chemistry, enabling a scalable route for integrating BiFeO3 films on silicon.

Název v anglickém jazyce

Role of Buffer Layers in Defect Chemistry and Parasitic Phase Formation of BiFeO3 Films on Silicon

Popis výsledku anglicky

Achieving the reliable integration of bismuth ferrite with silicon requires precise control over phase formation, cation stoichiometry, and near-surface oxygen chemistry. In this study, BiFeO3 films were deposited by pulsed laser deposition onto Ti- and TiO2-buffered Si substrates under varied oxygen partial pressures and substrate temperatures. Structural, morphological, and chemical evolutions were investigated using X-ray diffraction, scanning electron microscopy, and combined survey and high-resolution X-ray photoelectron spectroscopy. Both buffer types yield polycrystalline BiFeO3 films; Ti-buffered samples exhibit lower variations in Bi/Fe surface ratios, whereas TiO2buffered films show a reduced contribution from hydroxyl-related oxygen species at the surface. X-ray photoelectron spectroscopy confirms that Bi and Fe remain exclusively in the trivalent state under all growth conditions. High-resolution oxygen spectra demonstrate that oxygen chemistry is the most sensitive indicator of near-surface disorder, reflecting contributions from lattice oxygen and surface hydroxylation arising from ambient exposure. Minor Bi2O3 phases persist across the investigated deposition window; however, their evolution, together with surface oxygen trends, indicates that intermediate-to-high substrate temperatures combined with moderate-to-low oxygen pressures provide the most favorable conditions for stabilizing near-stoichiometric BiFeO3. Overall, the results highlight oxide buffer layers as effective regulators of surface chemistry, enabling a scalable route for integrating BiFeO3 films on silicon.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2026

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Omega

ISSN

2470-1343

e-ISSN

2470-1343

Svazek periodika

11

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

14

Strana od-do

7782-7795

Kód UT WoS článku

001674311200001

EID výsledku v databázi Scopus

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