Substrate-temperature-driven phase stabilization and strain modulation in BiFeO3/Ti/Si heterostructures for scalable silicon integration

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F25%3A00643173" target="_blank" >RIV/68081723:_____/25:00643173 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081731:_____/25:00643173 RIV/00216305:26220/26:0200626

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0925838825065132" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0925838825065132</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jallcom.2025.184949" target="_blank" >10.1016/j.jallcom.2025.184949</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Substrate-temperature-driven phase stabilization and strain modulation in BiFeO3/Ti/Si heterostructures for scalable silicon integration

Popis výsledku v původním jazyce

Building on recent advances in oxide electronics and silicon-compatible integration, this study demonstrates a scalable approach for incorporating bismuth ferrite into silicon platforms without relying on complex epitaxial templates. BiFeO3 films were grown on titanium-buffered silicon by pulsed laser deposition at a fixed oxygen partial pressure of 5.2 x 10-2 mbar and variable substrate temperatures. The film grown at 913 K exhibits the highest crystallinity, phase purity, and enhanced magnetic functionality. X-ray diffraction confirms single-phase rhombohedral BiFeO3 with strain-induced lattice distortion, while X-ray photoelectron spectroscopy reveals stable Bi3+/Fe3+ stoichiometry and a moderate oxygen vacancy concentration that supports defect-assisted exchange without compromising stoichiometric balance. Magnetic force microscopy reveals smooth grain-like topography and isotropic domain patterns, consistent with temperature- and field-dependent magnetization behavior. Domain correlation lengths span multiple grains, indicating exchange coupling within a structurally continuous BiFeO3 network. Upon cooling, a transition from thermally soft to strain-pinned magnetic response emerges, consistent with the random magnetic anisotropy model. The weak ferromagnetic state originates from strain-driven suppression of the cycloidal spin structure through the Dzyaloshinskii-Moriya interaction, further reinforced by defect-mediated exchange. These findings establish the BiFeO3/Ti/Si heterostructure as a robust, silicon-compatible platform for integrating multifunctional oxides into scalable, non-epitaxial device architectures.

Název v anglickém jazyce

Substrate-temperature-driven phase stabilization and strain modulation in BiFeO3/Ti/Si heterostructures for scalable silicon integration

Popis výsledku anglicky

Building on recent advances in oxide electronics and silicon-compatible integration, this study demonstrates a scalable approach for incorporating bismuth ferrite into silicon platforms without relying on complex epitaxial templates. BiFeO3 films were grown on titanium-buffered silicon by pulsed laser deposition at a fixed oxygen partial pressure of 5.2 x 10-2 mbar and variable substrate temperatures. The film grown at 913 K exhibits the highest crystallinity, phase purity, and enhanced magnetic functionality. X-ray diffraction confirms single-phase rhombohedral BiFeO3 with strain-induced lattice distortion, while X-ray photoelectron spectroscopy reveals stable Bi3+/Fe3+ stoichiometry and a moderate oxygen vacancy concentration that supports defect-assisted exchange without compromising stoichiometric balance. Magnetic force microscopy reveals smooth grain-like topography and isotropic domain patterns, consistent with temperature- and field-dependent magnetization behavior. Domain correlation lengths span multiple grains, indicating exchange coupling within a structurally continuous BiFeO3 network. Upon cooling, a transition from thermally soft to strain-pinned magnetic response emerges, consistent with the random magnetic anisotropy model. The weak ferromagnetic state originates from strain-driven suppression of the cycloidal spin structure through the Dzyaloshinskii-Moriya interaction, further reinforced by defect-mediated exchange. These findings establish the BiFeO3/Ti/Si heterostructure as a robust, silicon-compatible platform for integrating multifunctional oxides into scalable, non-epitaxial device architectures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10101 - Pure mathematics

Projekt

<a href="/cs/project/VK01010026" target="_blank" >VK01010026: Vývoj inovativních difraktivních prvků pro pokročilé zabezpečení výrobků, cenin a dokumentů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Alloys and Compounds

ISSN

0925-8388

e-ISSN

1873-4669

Svazek periodika

1047

Číslo periodika v rámci svazku

5 December

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

11

Strana od-do

184949

Kód UT WoS článku

001621655300003

EID výsledku v databázi Scopus

2-s2.0-105021343488