Nanoscratch testing of a-SiC:H films on silicon wafers deposited by PECVD

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F17%3APU124670" target="_blank" >RIV/00216305:26310/17:PU124670 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Nanoscratch testing of a-SiC:H films on silicon wafers deposited by PECVD

Popis výsledku v původním jazyce

Adhesion of thin film to the substrate is one of the most important properties in determining its application possibilities. Thin films of hydrogenated amorphous carbon-silicon (a-SiC:H) alloy were deposited on silicon wafers from tetravinylsilane (TVS) monomer by plasma-enhanced chemical vapor deposition (PECVD). The silicon wafers were pretreated with argon or oxygen plasmas (10 sccm, 5.7 Pa, 5-200 W) using continuous wave for 10 min to clean the surface from adsorbed gases and reach reproducible adhesion of films. A mass flow rate of TVS used for film deposition was 3.8 sccm at a pressure of 2.7 Pa. Pulsed plasma was employed to deposit thin films at an effective power ranging from 2 to 150 W. Thin films of 0.1 μm thickness were tested by scratch test using a conical (90 °) diamond tip with a radius of 1 µm, linearly loading with time from 1 µN to 6 mN at a loading rate of 12 mN/min and using a scratch length of 10 μm. The film adhesion was characterized by the critical load that is defined as the

Název v anglickém jazyce

Nanoscratch testing of a-SiC:H films on silicon wafers deposited by PECVD

Popis výsledku anglicky

Adhesion of thin film to the substrate is one of the most important properties in determining its application possibilities. Thin films of hydrogenated amorphous carbon-silicon (a-SiC:H) alloy were deposited on silicon wafers from tetravinylsilane (TVS) monomer by plasma-enhanced chemical vapor deposition (PECVD). The silicon wafers were pretreated with argon or oxygen plasmas (10 sccm, 5.7 Pa, 5-200 W) using continuous wave for 10 min to clean the surface from adsorbed gases and reach reproducible adhesion of films. A mass flow rate of TVS used for film deposition was 3.8 sccm at a pressure of 2.7 Pa. Pulsed plasma was employed to deposit thin films at an effective power ranging from 2 to 150 W. Thin films of 0.1 μm thickness were tested by scratch test using a conical (90 °) diamond tip with a radius of 1 µm, linearly loading with time from 1 µN to 6 mN at a loading rate of 12 mN/min and using a scratch length of 10 μm. The film adhesion was characterized by the critical load that is defined as the

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10403 - Physical chemistry

Projekt

<a href="/cs/project/GA16-09161S" target="_blank" >GA16-09161S: Syntéza multifunkčních plazmových polymerů pro polymerní kompozity bez rozhraní</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů