Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26310%2F26%3A0200439" target="_blank" >RIV/00216305:26310/26:0200439 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0169433225026881?pes=vor&utm_source=scopus&getft_integrator=scopus" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433225026881?pes=vor&utm_source=scopus&getft_integrator=scopus</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2025.164972" target="_blank" >10.1016/j.apsusc.2025.164972</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent

Popis výsledku v původním jazyce

Plasma polymer (1.2 g cm-3), compact silicon carbide (2.1 g cm-3) and plasma silica (2.2 g cm-3) were synthesized from pure tetravinylsilane vapor or its mixture with argon or oxygen by plasma-enhanced chemical vapor deposition. These materials in the form of nanolayers were combined into layered nanostructures deposited on silicon wafers. XPS depth profiling was used to analyze the chemical depth profiles across the layered nanostructures. The oxidation resistance of highly cross-linked silicon carbide and plasma silica was confirmed after 18 months of storage. However, the plasma polymer with low oxidation resistance must be protected by a 5-nm thick compact silicon carbide barrier to prevent its oxidation. Plasma silica was identified as the source of oxidizing agent for the adjacent plasma polymer in the silica/polymer nanostructure protected by a barrier against the surrounding environment. Oxygen penetrated the polymer by 37 nm in two years.

Název v anglickém jazyce

Oxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent

Popis výsledku anglicky

Plasma polymer (1.2 g cm-3), compact silicon carbide (2.1 g cm-3) and plasma silica (2.2 g cm-3) were synthesized from pure tetravinylsilane vapor or its mixture with argon or oxygen by plasma-enhanced chemical vapor deposition. These materials in the form of nanolayers were combined into layered nanostructures deposited on silicon wafers. XPS depth profiling was used to analyze the chemical depth profiles across the layered nanostructures. The oxidation resistance of highly cross-linked silicon carbide and plasma silica was confirmed after 18 months of storage. However, the plasma polymer with low oxidation resistance must be protected by a 5-nm thick compact silicon carbide barrier to prevent its oxidation. Plasma silica was identified as the source of oxidizing agent for the adjacent plasma polymer in the silica/polymer nanostructure protected by a barrier against the surrounding environment. Oxygen penetrated the polymer by 37 nm in two years.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA16-09161S" target="_blank" >GA16-09161S: Syntéza multifunkčních plazmových polymerů pro polymerní kompozity bez rozhraní</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2026

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

APPLIED SURFACE SCIENCE

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

719

Číslo periodika v rámci svazku

28.2.2026

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

1-9

Kód UT WoS článku

001614891700002

EID výsledku v databázi Scopus

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