Properties of atmospheric pressure plasma oxidized layers on silicon wafers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F15%3A00082344" target="_blank" >RIV/00216224:14310/15:00082344 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.degruyter.com/view/journals/chem/open-issue/article-10.1515-chem-2015-0047/article-10.1515-chem-2015-0047.xml" target="_blank" >https://www.degruyter.com/view/journals/chem/open-issue/article-10.1515-chem-2015-0047/article-10.1515-chem-2015-0047.xml</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1515/chem-2015-0047" target="_blank" >10.1515/chem-2015-0047</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Properties of atmospheric pressure plasma oxidized layers on silicon wafers

Popis výsledku v původním jazyce

In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry,infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.

Název v anglickém jazyce

Properties of atmospheric pressure plasma oxidized layers on silicon wafers

Popis výsledku anglicky

In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry,infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/ED2.1.00%2F03.0086" target="_blank" >ED2.1.00/03.0086: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Open Chemistry

ISSN

2391-5420

e-ISSN

—

Svazek periodika

13

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

PL - Polská republika

Počet stran výsledku

6

Strana od-do

376-381

Kód UT WoS článku

000355403100045

EID výsledku v databázi Scopus

2-s2.0-84982737848