Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F13%3APU103336" target="_blank" >RIV/00216305:26620/13:PU103336 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

čeština

Název v původním jazyce

Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

Popis výsledku v původním jazyce

Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral densitywere measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IVcharacteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage ca

Název v anglickém jazyce

Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

Popis výsledku anglicky

Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral densitywere measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IVcharacteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage ca

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Scripta

ISSN

0031-8949

e-ISSN

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Svazek periodika

85

Číslo periodika v rámci svazku

03

Stát vydavatele periodika

SE - Švédské království

Počet stran výsledku

5

Strana od-do

1-5

Kód UT WoS článku

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EID výsledku v databázi Scopus

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