X-ray induced electrostatic graphene doping via defect charging in gate dielectric

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F17%3APU123309" target="_blank" >RIV/00216305:26620/17:PU123309 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.nature.com/articles/s41598-017-00673-z" target="_blank" >https://www.nature.com/articles/s41598-017-00673-z</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41598-017-00673-z" target="_blank" >10.1038/s41598-017-00673-z</a>

Jazyk výsledku

angličtina

Název v původním jazyce

X-ray induced electrostatic graphene doping via defect charging in gate dielectric

Popis výsledku v původním jazyce

Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of graphene, which is explained by X-ray radiation induced charging of defects in the gate dielectric. The induced charge can be neutralized and compensated if the graphene device is irradiated by X-rays at a negative gate voltage. Here the charge neutrality point shifts back to zero voltage. The observed phenomenon has strong implications for interpretation of X-ray based measurements of graphene devices as it renders them to significantly altered state. Our results also form a basis for remote X-ray tuning of graphene transport properties and X-ray sensors comprising the graphene/oxide interface as an active layer

Název v anglickém jazyce

X-ray induced electrostatic graphene doping via defect charging in gate dielectric

Popis výsledku anglicky

Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of graphene, which is explained by X-ray radiation induced charging of defects in the gate dielectric. The induced charge can be neutralized and compensated if the graphene device is irradiated by X-rays at a negative gate voltage. Here the charge neutrality point shifts back to zero voltage. The observed phenomenon has strong implications for interpretation of X-ray based measurements of graphene devices as it renders them to significantly altered state. Our results also form a basis for remote X-ray tuning of graphene transport properties and X-ray sensors comprising the graphene/oxide interface as an active layer

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Scientific Reports

ISSN

2045-2322

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

000398135500001

EID výsledku v databázi Scopus

2-s2.0-85017126102