Gate-Tunable Spin Hall Effect in Trilayer Graphene/Group-IV Monochalcogenide van der Waals Heterostructures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F24%3A43929856" target="_blank" >RIV/60461373:22310/24:43929856 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/10.1002/adfm.202404872" target="_blank" >https://onlinelibrary.wiley.com/doi/10.1002/adfm.202404872</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adfm.202404872" target="_blank" >10.1002/adfm.202404872</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Gate-Tunable Spin Hall Effect in Trilayer Graphene/Group-IV Monochalcogenide van der Waals Heterostructures

Popis výsledku v původním jazyce

Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin-orbit coupling materials in close contact with graphene leading to spin-orbit proximity and, consequently, efficient spin-to-charge conversion through mechanisms such as the spin Hall effect. Here, the gate-dependent spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS) is reported and quantified, a group-IV monochalcogenide that has recently been predicted to be a viable alternative to transition-metal dichalcogenides for inducing strong spin-orbit coupling in graphene. The spin Hall angle exhibits a maximum around the charge neutrality point of graphene up to room temperature. The findings expand the library of materials that induce spin-orbit coupling in graphene to a new class, group-IV monochalcogenides, thereby highlighting the potential of 2D materials to pave the way for the development of innovative spin-based devices and future technological applications. The spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS), a group-IV monochalcogenide, is observed with non-local spin precession experiments up to room temperature. The output of the spin-charge interconversion as well as the spin Hall angle is gate tunable and exhibits a maximum when the Fermi level is around the charge neutrality point of the graphene. image

Název v anglickém jazyce

Gate-Tunable Spin Hall Effect in Trilayer Graphene/Group-IV Monochalcogenide van der Waals Heterostructures

Popis výsledku anglicky

Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin-orbit coupling materials in close contact with graphene leading to spin-orbit proximity and, consequently, efficient spin-to-charge conversion through mechanisms such as the spin Hall effect. Here, the gate-dependent spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS) is reported and quantified, a group-IV monochalcogenide that has recently been predicted to be a viable alternative to transition-metal dichalcogenides for inducing strong spin-orbit coupling in graphene. The spin Hall angle exhibits a maximum around the charge neutrality point of graphene up to room temperature. The findings expand the library of materials that induce spin-orbit coupling in graphene to a new class, group-IV monochalcogenides, thereby highlighting the potential of 2D materials to pave the way for the development of innovative spin-based devices and future technological applications. The spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS), a group-IV monochalcogenide, is observed with non-local spin precession experiments up to room temperature. The output of the spin-charge interconversion as well as the spin Hall angle is gate tunable and exhibits a maximum when the Fermi level is around the charge neutrality point of the graphene. image

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/LL2101" target="_blank" >LL2101: Příští Generace Monoelementárních 2D Materiálů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ADVANCED FUNCTIONAL MATERIALS

ISSN

1616-301X

e-ISSN

1616-3028

Svazek periodika

34

Číslo periodika v rámci svazku

42

Stát vydavatele periodika

TW - Čínská republika (Tchaj-wan)

Počet stran výsledku

8

Strana od-do

—

Kód UT WoS článku

001207980700001

EID výsledku v databázi Scopus

2-s2.0-85191300731