Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU142766" target="_blank" >RIV/00216305:26620/22:PU142766 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/70883521:28110/22:63548719

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s10853-021-06846-6" target="_blank" >https://link.springer.com/article/10.1007/s10853-021-06846-6</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10853-021-06846-6" target="_blank" >10.1007/s10853-021-06846-6</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers

Popis výsledku v původním jazyce

This work proposes a structure which allows characterization of graphene monolayers under combined electric field and mechanical strain modulation. Our approach is based on a cantilever integrated into a two-dimensional graphene-based field effect transistor (FET). This allows us to change graphene properties either separately or together via two methods. The first way involves electric field induced by the gate. The second is induction of mechanical strain caused by external force pushing the cantilever up or down. We fabricated devices using silicon-on-insulator wafer with practically zero value of residual stress and a high‑ quality dielectric layer which allowed us to precisely characterize structures using both mentioned stimuli. We used the electric field/strain interplay to control resistivity and position of the charge neutrality point often described as the Dirac point of graphene. Furthermore, values of cantilever to bend after the structure is released. Our device demonstrates a novel method of tuning the physical properties of graphene in silicon and/or complementary metal‑oxide‑semiconductor technology, and is thus promising for tunable physical or chemical sensors.

Název v anglickém jazyce

Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers

Popis výsledku anglicky

This work proposes a structure which allows characterization of graphene monolayers under combined electric field and mechanical strain modulation. Our approach is based on a cantilever integrated into a two-dimensional graphene-based field effect transistor (FET). This allows us to change graphene properties either separately or together via two methods. The first way involves electric field induced by the gate. The second is induction of mechanical strain caused by external force pushing the cantilever up or down. We fabricated devices using silicon-on-insulator wafer with practically zero value of residual stress and a high‑ quality dielectric layer which allowed us to precisely characterize structures using both mentioned stimuli. We used the electric field/strain interplay to control resistivity and position of the charge neutrality point often described as the Dirac point of graphene. Furthermore, values of cantilever to bend after the structure is released. Our device demonstrates a novel method of tuning the physical properties of graphene in silicon and/or complementary metal‑oxide‑semiconductor technology, and is thus promising for tunable physical or chemical sensors.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Science

ISSN

0022-2461

e-ISSN

1573-4803

Svazek periodika

57

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

1923-1935

Kód UT WoS článku

000739772900001

EID výsledku v databázi Scopus

2-s2.0-85122377631