Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU133599" target="_blank" >RIV/00216305:26620/19:PU133599 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201800368" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201800368</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201800368" target="_blank" >10.1002/pssb.201800368</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

Popis výsledku v původním jazyce

Nanowires provide a platform for the integration of heterogeneous materials in III–V systems grown on Si. B x Ga 1−x As is an interesting material for strain applications, which has not yet been studied in nanowire form. The incorporation of boron in GaAs nanowires is investigated via DC-IV measurements. In transmission electron microscopy analysis a high concentration of boron is found at the nanowire edges, indicating surface segregation during growth. Nanowires grown under boron flux are found to exhibit Ohmic contacts and low contact resistances with p-type metallizations such as Au/Zn/Au or Cr/Au. Back-gated measurements confirmed the p-type behavior of such nanowires, indicating that boron is incorporated on antisite defects where it acts as a doubly-charged acceptor. This offers a new route for the inclusion of p-doped layers in GaAs-based nanowire heterostructures and the subsequent formation of Ohmic contacts.

Název v anglickém jazyce

Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

Popis výsledku anglicky

Nanowires provide a platform for the integration of heterogeneous materials in III–V systems grown on Si. B x Ga 1−x As is an interesting material for strain applications, which has not yet been studied in nanowire form. The incorporation of boron in GaAs nanowires is investigated via DC-IV measurements. In transmission electron microscopy analysis a high concentration of boron is found at the nanowire edges, indicating surface segregation during growth. Nanowires grown under boron flux are found to exhibit Ohmic contacts and low contact resistances with p-type metallizations such as Au/Zn/Au or Cr/Au. Back-gated measurements confirmed the p-type behavior of such nanowires, indicating that boron is incorporated on antisite defects where it acts as a doubly-charged acceptor. This offers a new route for the inclusion of p-doped layers in GaAs-based nanowire heterostructures and the subsequent formation of Ohmic contacts.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

<a href="/cs/project/EF16_027%2F0008371" target="_blank" >EF16_027/0008371: Mezinárodní mobilita výzkumníků Vysokého učení technického v Brně</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

ISSN

0370-1972

e-ISSN

1521-3951

Svazek periodika

256

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

5

Strana od-do

1800368-1800368

Kód UT WoS článku

000476946300017

EID výsledku v databázi Scopus

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