Anodic formation of HfO2 nanostructure arrays for resistive switching application

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F21%3APU142239" target="_blank" >RIV/00216305:26620/21:PU142239 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.confer.cz/nanocon/2020/3692-anodic-formation-of-hfo2-nanostructure-arrays-for-resistive-switching-application" target="_blank" >https://www.confer.cz/nanocon/2020/3692-anodic-formation-of-hfo2-nanostructure-arrays-for-resistive-switching-application</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.37904/nanocon.2020.3692" target="_blank" >10.37904/nanocon.2020.3692</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Anodic formation of HfO2 nanostructure arrays for resistive switching application

Popis výsledku v původním jazyce

Thin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability, low operating voltages of resulting devices, and complementary metal-oxide-semiconductor technology compatibility of this material. In this study, we investigate the resistive switching behavior of nanostructured HfO2 film embedded in a porous anodic alumina matrix. The film was synthesized via self-organized electrochemical anodizing of a sputter-deposited Al/Hf bilayer on a Si substrate in an oxalic acid solution. The film was investigated by scanning electron microscopy. Simple metal/insulator/metal devices were prepared by sputter-deposition of Pt top electrodes through a shadow mask onto the nanostructured film. Assembled devices were characterized by I-V measurements. A bipolar eight-wise resistive switching was obtained, demonstrating a highly repeatable and stable low-voltage behavior in a set potential range. The achieved results indicate the high potential of the anodizing technique as an alternative to commonly used methods for producing insulating thin films for resistive random-access memory application.

Název v anglickém jazyce

Anodic formation of HfO2 nanostructure arrays for resistive switching application

Popis výsledku anglicky

Thin dielectric films are actively investigated as materials for novel resistive random-access memories based on resistive switching effect in metal/insulator/metal structures. Thin HfO2 films are of particular interest due to the high thermal stability, low operating voltages of resulting devices, and complementary metal-oxide-semiconductor technology compatibility of this material. In this study, we investigate the resistive switching behavior of nanostructured HfO2 film embedded in a porous anodic alumina matrix. The film was synthesized via self-organized electrochemical anodizing of a sputter-deposited Al/Hf bilayer on a Si substrate in an oxalic acid solution. The film was investigated by scanning electron microscopy. Simple metal/insulator/metal devices were prepared by sputter-deposition of Pt top electrodes through a shadow mask onto the nanostructured film. Assembled devices were characterized by I-V measurements. A bipolar eight-wise resistive switching was obtained, demonstrating a highly repeatable and stable low-voltage behavior in a set potential range. The achieved results indicate the high potential of the anodizing technique as an alternative to commonly used methods for producing insulating thin films for resistive random-access memory application.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings 12th International Conference on Nanomaterials - Research & Application

ISBN

978-80-87294-98-7

ISSN

—

e-ISSN

—

Počet stran výsledku

5

Strana od-do

122-126

Název nakladatele

TANGER LTD

Místo vydání

SLEZSKA

Místo konání akce

Brno, Hotel Voroněž

Datum konání akce

21. 10. 2020

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000664505500020