Depth profiling of thin plasma-polymerized amine films using GDOES in an Ar-O-2 plasma

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F22%3APU145653" target="_blank" >RIV/00216305:26620/22:PU145653 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/22:00127772

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0169433221033171?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0169433221033171?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2021.152292" target="_blank" >10.1016/j.apsusc.2021.152292</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Depth profiling of thin plasma-polymerized amine films using GDOES in an Ar-O-2 plasma

Popis výsledku v původním jazyce

Thin polymer films were deposited on polished stainless-steel samples by PECVD from a cyclopropylamine precursor and characterized by X-ray photoelectron spectroscopy, secondary-ion mass spectrometry and glow discharge optical emission spectroscopy (GDOES) depth profiling. These depth profiles exhibited reasonable agreement. The GDOES involved the erosion of the polymer films in plasma sustained by an asymmetric RF capacitively coupled discharge using both Ar and Ar-O-2 gases. The application of pure Ar caused unwanted effects, such as the broadening of the polymer-film/substrate interface, which were suppressed when using the mixture with oxygen. Another benefit of oxygen was a significant increase in the etching rate by a factor of about 15 as compared to pure argon. The mechanisms involved in the depth profiling using the mixture of gases were elaborated in some detail, taking into account plasma parameters typical for an asymmetric, capacitively coupled RF discharge in a small volume. The main benefit of using the Ar/O-2 GDOES profiling with respect to XPS and SIMS depth profiling is the increased sputtering rate for polymer films. Comparing the GDOES depth profiling with the Ar/O-2 mixture with profiling in pure Ar, the benefits are a higher sputtering rate and better depth resolution at the polymer/substrate interface.

Název v anglickém jazyce

Depth profiling of thin plasma-polymerized amine films using GDOES in an Ar-O-2 plasma

Popis výsledku anglicky

Thin polymer films were deposited on polished stainless-steel samples by PECVD from a cyclopropylamine precursor and characterized by X-ray photoelectron spectroscopy, secondary-ion mass spectrometry and glow discharge optical emission spectroscopy (GDOES) depth profiling. These depth profiles exhibited reasonable agreement. The GDOES involved the erosion of the polymer films in plasma sustained by an asymmetric RF capacitively coupled discharge using both Ar and Ar-O-2 gases. The application of pure Ar caused unwanted effects, such as the broadening of the polymer-film/substrate interface, which were suppressed when using the mixture with oxygen. Another benefit of oxygen was a significant increase in the etching rate by a factor of about 15 as compared to pure argon. The mechanisms involved in the depth profiling using the mixture of gases were elaborated in some detail, taking into account plasma parameters typical for an asymmetric, capacitively coupled RF discharge in a small volume. The main benefit of using the Ar/O-2 GDOES profiling with respect to XPS and SIMS depth profiling is the increased sputtering rate for polymer films. Comparing the GDOES depth profiling with the Ar/O-2 mixture with profiling in pure Ar, the benefits are a higher sputtering rate and better depth resolution at the polymer/substrate interface.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

APPLIED SURFACE SCIENCE

ISSN

0169-4332

e-ISSN

1873-5584

Svazek periodika

581

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

10

Strana od-do

1-10

Kód UT WoS článku

000799074500006

EID výsledku v databázi Scopus

2-s2.0-85122504447