High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F23%3APU147372" target="_blank" >RIV/00216305:26620/23:PU147372 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/aelm.202200980" target="_blank" >10.1002/aelm.202200980</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Popis výsledku v původním jazyce

Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

Název v anglickém jazyce

High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Popis výsledku anglicky

Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Electronic Materials

ISSN

2199-160X

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

11

Strana od-do

1-11

Kód UT WoS článku

000000000001111

EID výsledku v databázi Scopus

2-s2.0-85147178219