Understanding the Effect of Electron Irradiation on WS2 Nanotube Devices to Improve Prototyping Routines

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F24%3APU155043" target="_blank" >RIV/00216305:26620/24:PU155043 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/10.1021/acsaelm.4c01450" target="_blank" >https://pubs.acs.org/doi/10.1021/acsaelm.4c01450</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsaelm.4c01450" target="_blank" >10.1021/acsaelm.4c01450</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Understanding the Effect of Electron Irradiation on WS2 Nanotube Devices to Improve Prototyping Routines

Popis výsledku v původním jazyce

To satisfy the needs of the current technological world that demands high performance and efficiency, a deep understanding of the whole fabrication process of electronic devices based on low-dimensional materials is necessary for rapid prototyping of devices. The fabrication processes of such nanoscale devices often include exposure to an electron beam. A field effect transistor (FET) is a core device in current computation technology, and FET configuration is also commonly used for extraction of electronic properties of low-dimensional materials. In this experimental study, we analyze the effect of electron beam exposure on electrical properties of individual WS2 nanotubes in the FET configuration by in-operando transport measurements inside a scanning electron microscope. Upon exposure to the electron beam, we observed a significant change in the resistance of individual substrate-supported nanotubes (by a factor of 2 to 14) that was generally irreversible. The resistance of each nanotube did not return to its original state even after keeping it under ambient conditions for hours to days. Furthermore, we employed Kelvin probe force microscopy to monitor surface potential and identified that substrate charging is the primary cause of changes in nanotubes' resistance. Hence, extra care should be taken when analyzing nanostructures in contact with insulating oxides that are subject to electron exposure during or after fabrication.

Název v anglickém jazyce

Understanding the Effect of Electron Irradiation on WS2 Nanotube Devices to Improve Prototyping Routines

Popis výsledku anglicky

To satisfy the needs of the current technological world that demands high performance and efficiency, a deep understanding of the whole fabrication process of electronic devices based on low-dimensional materials is necessary for rapid prototyping of devices. The fabrication processes of such nanoscale devices often include exposure to an electron beam. A field effect transistor (FET) is a core device in current computation technology, and FET configuration is also commonly used for extraction of electronic properties of low-dimensional materials. In this experimental study, we analyze the effect of electron beam exposure on electrical properties of individual WS2 nanotubes in the FET configuration by in-operando transport measurements inside a scanning electron microscope. Upon exposure to the electron beam, we observed a significant change in the resistance of individual substrate-supported nanotubes (by a factor of 2 to 14) that was generally irreversible. The resistance of each nanotube did not return to its original state even after keeping it under ambient conditions for hours to days. Furthermore, we employed Kelvin probe force microscopy to monitor surface potential and identified that substrate charging is the primary cause of changes in nanotubes' resistance. Hence, extra care should be taken when analyzing nanostructures in contact with insulating oxides that are subject to electron exposure during or after fabrication.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

20501 - Materials engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Electronic Materials

ISSN

2637-6113

e-ISSN

—

Svazek periodika

6

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

8776-8782

Kód UT WoS článku

001378943100001

EID výsledku v databázi Scopus

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