Planar FIB Milling of Copper by using the Novel Rocking Stage Technology

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F01733214%3A_____%2F16%3AN0000006" target="_blank" >RIV/01733214:_____/16:N0000006 - isvavai.cz</a>

Výsledek na webu

<a href="http://easychair.org/smart-program/ESREF2016/2016-09-20.html#talk:27670" target="_blank" >http://easychair.org/smart-program/ESREF2016/2016-09-20.html#talk:27670</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Planar FIB Milling of Copper by using the Novel Rocking Stage Technology

Popis výsledku v původním jazyce

Copper has found immense applications within the semiconductor industry. In order to make site-specific alterations using focused ion beam (FIB) at nanoscale levels, it is imperative we manage to operate on polycrystalline copper directly with no need for an extensive grain size and orientation study prior to performing FIB milling operations. Homogenous copper FIB milling arises from the need to perform various circuit edit operations below the dielectric layer following the copper layer. If the layer beneath the dielectric is affected by inhomogeneous milling, it can lead to short-circuit and eventual device breakdown. Failure analysis on an integrated circuit was performed using rocking stage with 6-axes piezo movement capabilities together with the novel approach of the combined Xe-plasma ion source FIB and SEM system (XEIA. Site-specific milling of copper with different milling strategies were tested to optimize time and homogeneity of the milling across the target surface and to overcome the channelling effect posed by polycrystalline copper. Only during the last few nanometres of copper layer the water vapour is used to protect the dielectric layer. The complete removal of copper was followed with XeF2 assisted milling of the dielectric layer to observe the unharmed circuitry. Channelling effect was reduced by regulating the sputtering rates across different grains keeping the underlying dielectric layer safe. High-resolution scanning electron microscopy (HR-SEM) imaging was used for constant monitoring of the removed material to help modulate the process for highest throughput in the least possible amount of time.

Název v anglickém jazyce

Planar FIB Milling of Copper by using the Novel Rocking Stage Technology

Popis výsledku anglicky

Copper has found immense applications within the semiconductor industry. In order to make site-specific alterations using focused ion beam (FIB) at nanoscale levels, it is imperative we manage to operate on polycrystalline copper directly with no need for an extensive grain size and orientation study prior to performing FIB milling operations. Homogenous copper FIB milling arises from the need to perform various circuit edit operations below the dielectric layer following the copper layer. If the layer beneath the dielectric is affected by inhomogeneous milling, it can lead to short-circuit and eventual device breakdown. Failure analysis on an integrated circuit was performed using rocking stage with 6-axes piezo movement capabilities together with the novel approach of the combined Xe-plasma ion source FIB and SEM system (XEIA. Site-specific milling of copper with different milling strategies were tested to optimize time and homogeneity of the milling across the target surface and to overcome the channelling effect posed by polycrystalline copper. Only during the last few nanometres of copper layer the water vapour is used to protect the dielectric layer. The complete removal of copper was followed with XeF2 assisted milling of the dielectric layer to observe the unharmed circuitry. Channelling effect was reduced by regulating the sputtering rates across different grains keeping the underlying dielectric layer safe. High-resolution scanning electron microscopy (HR-SEM) imaging was used for constant monitoring of the removed material to help modulate the process for highest throughput in the least possible amount of time.

Druh

O - Ostatní výsledky

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/TE01020233" target="_blank" >TE01020233: Platforma pokročilých mikroskopických a spektroskopických technik pro nano a mikrotechnologie</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů