Imaging ellipsometry of cobalt oxide thin films for the fabrication of Co3O4/CeO2 diodes by spin-coating

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F10974938%3A_____%2F25%3A25_88_24" target="_blank" >RIV/10974938:_____/25:25_88_24 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.optmat.2025.117410" target="_blank" >https://doi.org/10.1016/j.optmat.2025.117410</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2025.117410" target="_blank" >10.1016/j.optmat.2025.117410</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Imaging ellipsometry of cobalt oxide thin films for the fabrication of Co3O4/CeO2 diodes by spin-coating

Popis výsledku v původním jazyce

Cobalt oxide (Co3O4) and Gd doped cerium oxide (CeO2) thin films were synthesized by a spin coating process to obtain a p-n junction. The surface of both films was characterized by spectroscopic imaging ellipsometry (SIE). The uniformity of the ellipsometric angles was analyzed by a principal component analysis (PCA). The variability of the spectra composing the SIE images led to an estimated error of 10.5 % on the determined thickness and optical parameters. The measured energy band gap of Co3O4 films with optimized deposition conditions was 1.79 eV. The heterostructure TCO/CeO2:Gd/Co3O4 formed a n-p junction exhibiting diode behavior, with a rectification factor of 1.57, shunt conductance of G = 1.75 mS cm-2 and series resistance of R = 46.54 Omega cm2, showing the feasibility of this heterojunction for diode devices.

Název v anglickém jazyce

Imaging ellipsometry of cobalt oxide thin films for the fabrication of Co3O4/CeO2 diodes by spin-coating

Popis výsledku anglicky

Cobalt oxide (Co3O4) and Gd doped cerium oxide (CeO2) thin films were synthesized by a spin coating process to obtain a p-n junction. The surface of both films was characterized by spectroscopic imaging ellipsometry (SIE). The uniformity of the ellipsometric angles was analyzed by a principal component analysis (PCA). The variability of the spectra composing the SIE images led to an estimated error of 10.5 % on the determined thickness and optical parameters. The measured energy band gap of Co3O4 films with optimized deposition conditions was 1.79 eV. The heterostructure TCO/CeO2:Gd/Co3O4 formed a n-p junction exhibiting diode behavior, with a rectification factor of 1.57, shunt conductance of G = 1.75 mS cm-2 and series resistance of R = 46.54 Omega cm2, showing the feasibility of this heterojunction for diode devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF16_019%2F0000789" target="_blank" >EF16_019/0000789: Pokročilý výzkum s využitím fotonů a částic vytvořených vysoce intenzivními lasery</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials

ISSN

0925-3467

e-ISSN

1873-1252

Svazek periodika

168

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

117410

Kód UT WoS článku

001553561300001

EID výsledku v databázi Scopus

2-s2.0-105013250907