Effect of implantation of C, Si and Cu into ZrNb nanometric multilayers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F19%3AN0000190" target="_blank" >RIV/26722445:_____/19:N0000190 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/19:00339539 RIV/68407700:21340/19:00339539 RIV/61389005:_____/19:00525525

Výsledek na webu

<a href="https://www.confer.cz/metal/2019/735-effect-of-implantation-of-c-si-and-cu-into-zrnb-nanometric-multilayers" target="_blank" >https://www.confer.cz/metal/2019/735-effect-of-implantation-of-c-si-and-cu-into-zrnb-nanometric-multilayers</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.37904/metal.2019.735" target="_blank" >10.37904/metal.2019.735</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of implantation of C, Si and Cu into ZrNb nanometric multilayers

Popis výsledku v původním jazyce

Sputter-deposited Zr/Nb nanometric multilayer films with a periodicity (L) in the range from 6 to 167 nm were subjected to carbon, silicon and copper ion irradiation with low and high fluences at room temperature. The ion profiles, mechanical proprieties, and disordering behavior have been investigated by using a variety of experimental techniques (Secondary Ion Mass Spectrometry - SIMS, nanoindentation, X-ray diffraction - XRD, and scanning transmission electron microscopy - STEM). On the STEM bright field micrographs there is damage clearly visible on the surface side of the multilayer; deeper, the most damaged and disordered zone, located close to the maximum ion concentration, was observed. The in-depth C and Si concentration profiles obtained from SIMS were not affected by the periodicity of the nanolayers. This is in accordance with SRIM simulations. XRD and electron diffraction analyses suggest a structural evolution in relation to L. After irradiation, Zr (0002) and Nb (110) reflexions overlap for L=6 nm. For the periodicity L> 6 nm the Zr (0002) peak is shifted to higher angles and Nb (110) peak is shifted to lower angles.

Název v anglickém jazyce

Effect of implantation of C, Si and Cu into ZrNb nanometric multilayers

Popis výsledku anglicky

Sputter-deposited Zr/Nb nanometric multilayer films with a periodicity (L) in the range from 6 to 167 nm were subjected to carbon, silicon and copper ion irradiation with low and high fluences at room temperature. The ion profiles, mechanical proprieties, and disordering behavior have been investigated by using a variety of experimental techniques (Secondary Ion Mass Spectrometry - SIMS, nanoindentation, X-ray diffraction - XRD, and scanning transmission electron microscopy - STEM). On the STEM bright field micrographs there is damage clearly visible on the surface side of the multilayer; deeper, the most damaged and disordered zone, located close to the maximum ion concentration, was observed. The in-depth C and Si concentration profiles obtained from SIMS were not affected by the periodicity of the nanolayers. This is in accordance with SRIM simulations. XRD and electron diffraction analyses suggest a structural evolution in relation to L. After irradiation, Zr (0002) and Nb (110) reflexions overlap for L=6 nm. For the periodicity L> 6 nm the Zr (0002) peak is shifted to higher angles and Nb (110) peak is shifted to lower angles.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings 28th International Conference on Metallurgy and Materials

ISBN

978-808729492-5

ISSN

—

e-ISSN

—

Počet stran výsledku

6

Strana od-do

944-949

Název nakladatele

Tanger, Ltd.

Místo vydání

—

Místo konání akce

Brno

Datum konání akce

22. 5. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000539487400154