Thermal behavior of iron in 6H-SiC: Influence of He induced defects

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F22%3AN0000067" target="_blank" >RIV/26722445:_____/22:N0000067 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22310/22:43924188 RIV/68407700:21230/22:00358725 RIV/68407700:21340/22:00358725 RIV/00216208:11320/22:10454498

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S1359646222003013" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1359646222003013</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.scriptamat.2022.114805" target="_blank" >10.1016/j.scriptamat.2022.114805</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Thermal behavior of iron in 6H-SiC: Influence of He induced defects

Popis výsledku v původním jazyce

SiC is considered a perspective material in advanced nuclear systems as well as for electronic or spintronic applications, which require an ion implantation process. In this regard, two sets of 6H-SiC samples were implanted with i) 2.5 MeV Fe ions and ii) 2.5 MeV Fe ions and co-implanted 500 keV He ions at room temperature and then annealed at 1500 degrees C for 2 h. The microstructure evolution and Fe diffusion behavior before and after annealing were characterized and analyzed. After annealing, Fe concentration is enhanced close to the surface in the Fe-implanted sample, whereas in the co-implanted system, Fe atoms are redistributed into two distinct, spatially separated regions (close to the surface, and around the He-induced defects). The reason behind this finding is explained from an energetic point of view by using ab initio simulations. Technologically, the preexisting cavities can be used to control the Fe diffusion.

Název v anglickém jazyce

Thermal behavior of iron in 6H-SiC: Influence of He induced defects

Popis výsledku anglicky

SiC is considered a perspective material in advanced nuclear systems as well as for electronic or spintronic applications, which require an ion implantation process. In this regard, two sets of 6H-SiC samples were implanted with i) 2.5 MeV Fe ions and ii) 2.5 MeV Fe ions and co-implanted 500 keV He ions at room temperature and then annealed at 1500 degrees C for 2 h. The microstructure evolution and Fe diffusion behavior before and after annealing were characterized and analyzed. After annealing, Fe concentration is enhanced close to the surface in the Fe-implanted sample, whereas in the co-implanted system, Fe atoms are redistributed into two distinct, spatially separated regions (close to the surface, and around the He-induced defects). The reason behind this finding is explained from an energetic point of view by using ab initio simulations. Technologically, the preexisting cavities can be used to control the Fe diffusion.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Scripta Materialia

ISSN

1359-6462

e-ISSN

1872-8456

Svazek periodika

218

Číslo periodika v rámci svazku

September

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

1-6

Kód UT WoS článku

000808098500004

EID výsledku v databázi Scopus

2-s2.0-85130815142