U.S. Patent 9,099,481: Methods of laser marking semiconductor substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26821532%3A_____%2F15%3A%230000089" target="_blank" >RIV/26821532:_____/15:#0000089 - isvavai.cz</a>

Výsledek na webu

<a href="http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9,099,481.PN.&OS=PN/9,099,481&RS=PN/9,099,481" target="_blank" >http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=9,099,481.PN.&OS=PN/9,099,481&RS=PN/9,099,481</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

U.S. Patent 9,099,481: Methods of laser marking semiconductor substrates

Popis výsledku v původním jazyce

The present application relates, in general, to electronics, and more particularly, to semiconductors, structures thereof, and methods of forming semiconductor devices. In the past, the semiconductor industry has utilized various methods to form semiconductor devices. Semiconductor wafers can be used as the substrates for production of semiconductor devices. A substrate wafer can be made of a bulk semiconductor material such as silicon or a bulk material with a top layer, for example deposited using a homo- or hetero-epitaxial deposition process, or a wafer bonding process. Semiconductor substrates can be processed in highly-automated wafer fabs that use identification of each wafer. Also, engineering tests may have required additional identification of the processed wafers. Such identification can be provided with laser scribing on the wafer. A laser beam can be used to locally melt the material and thereby a visible "spot" was produced. From such spots symbols can be created. In some

Název v anglickém jazyce

U.S. Patent 9,099,481: Methods of laser marking semiconductor substrates

Popis výsledku anglicky

The present application relates, in general, to electronics, and more particularly, to semiconductors, structures thereof, and methods of forming semiconductor devices. In the past, the semiconductor industry has utilized various methods to form semiconductor devices. Semiconductor wafers can be used as the substrates for production of semiconductor devices. A substrate wafer can be made of a bulk semiconductor material such as silicon or a bulk material with a top layer, for example deposited using a homo- or hetero-epitaxial deposition process, or a wafer bonding process. Semiconductor substrates can be processed in highly-automated wafer fabs that use identification of each wafer. Also, engineering tests may have required additional identification of the processed wafers. Such identification can be provided with laser scribing on the wafer. A laser beam can be used to locally melt the material and thereby a visible "spot" was produced. From such spots symbols can be created. In some

Druh

P - Patent

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/TA01010078" target="_blank" >TA01010078: Struktury SOI pro pokročilé polovodičové aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Číslo patentu nebo vzoru

US001 9,099,481

Vydavatel

US001 -

Název vydavatele

United States Patent and Trademark Office (USPTO)

Místo vydání

Alexandria

Stát vydání

US - Spojené státy americké

Datum přijetí

4. 4. 2015

Název vlastníka

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Způsob využití

A - Výsledek využívá pouze poskytovatel

Druh možnosti využití

A - K využití výsledku jiným subjektem je vždy nutné nabytí licence