Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13440%2F17%3A43892828" target="_blank" >RIV/44555601:13440/17:43892828 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23520/17:43932094 RIV/49777513:23640/17:43932094

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S0040609017301062" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0040609017301062</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2017.02.017" target="_blank" >10.1016/j.tsf.2017.02.017</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices

Popis výsledku v původním jazyce

The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indiumtin oxide films by an aluminiumzinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100?/sq. The investigated AZO films with thickness up to 300 nmwere deposited on 150 ?mthick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering froma ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160 nm and sheet resistance lower than 100?/sq.were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology.

Název v anglickém jazyce

Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices

Popis výsledku anglicky

The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indiumtin oxide films by an aluminiumzinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100?/sq. The investigated AZO films with thickness up to 300 nmwere deposited on 150 ?mthick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering froma ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160 nm and sheet resistance lower than 100?/sq.were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

2017

Číslo periodika v rámci svazku

634

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

169-174

Kód UT WoS článku

000404802600023

EID výsledku v databázi Scopus

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