Influence of oxygen on the resistivity of co-sputtered transparent AZO films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F18%3A43951601" target="_blank" >RIV/49777513:23520/18:43951601 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23640/18:43951601

Výsledek na webu

<a href="http://dx.doi.org/10.1002/pssa.201700951" target="_blank" >http://dx.doi.org/10.1002/pssa.201700951</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssa.201700951" target="_blank" >10.1002/pssa.201700951</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of oxygen on the resistivity of co-sputtered transparent AZO films

Popis výsledku v původním jazyce

In the present work co-sputtering from ceramic and metallic targets is used to reduce the oxygen content in aluminium doped zinc oxide. Films with thickness between 200 and 220 nm are sputtered at 100 and 250 °C and investigated by X-ray diffraction, energy dispersive spectroscopy, and Hall measurements. It is found that reducing of the incorporated oxygen in the film leads to higher carrier concentration, mainly due to better effective activation of Al donors. Higher temperatures result in better carrier mobility due to improving the crystallinity. The best resistivity of 1.4 × 10−3 Ω cm of the highly transparent film prepared at 100 °C is achieved. A larger oxygen reduction leads to lower resistivity, but also results in the significant deterioration of transmittances.

Název v anglickém jazyce

Influence of oxygen on the resistivity of co-sputtered transparent AZO films

Popis výsledku anglicky

In the present work co-sputtering from ceramic and metallic targets is used to reduce the oxygen content in aluminium doped zinc oxide. Films with thickness between 200 and 220 nm are sputtered at 100 and 250 °C and investigated by X-ray diffraction, energy dispersive spectroscopy, and Hall measurements. It is found that reducing of the incorporated oxygen in the film leads to higher carrier concentration, mainly due to better effective activation of Al donors. Higher temperatures result in better carrier mobility due to improving the crystallinity. The best resistivity of 1.4 × 10−3 Ω cm of the highly transparent film prepared at 100 °C is achieved. A larger oxygen reduction leads to lower resistivity, but also results in the significant deterioration of transmittances.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

ISSN

1862-6300

e-ISSN

—

Svazek periodika

215

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

5

Strana od-do

—

Kód UT WoS článku

000438358000013

EID výsledku v databázi Scopus

2-s2.0-85043353704