Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters

Popis výsledku v původním jazyce

Thin nickel oxide layers (thickness ca 50 and 100 nm) for sensorics were fabricated by ion beam sputtering method with subsequent annealing. Ion beam formed from a mixture of argon and oxygen was used to sputter the nickel foil. Different volume ratios of argon:oxygen in mixture were used, ranging from 1:0 to 1:4. Deposited layers were characterized in as-deposited state and after annealing at temperature of 400°C. The study of electrophysical properties (sheet resistance, mobility and concentration ofcharge carriers) was performed by four point Van der Pauw technique and Hall measurements respectively. Hall measurements revealed majority charge carriers to be electrons. For as-deposited layers electron surface concentration decreases with increasingamount of oxygen in ion beam and is in range (5 - 23) x 10^20 m^-2 for above mentioned range of argon:oxygen ratios. According to this trend the sheet resistance of the layers increases with higher amount of oxygen in ion beam in the inte

Název v anglickém jazyce

Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters

Popis výsledku anglicky

Thin nickel oxide layers (thickness ca 50 and 100 nm) for sensorics were fabricated by ion beam sputtering method with subsequent annealing. Ion beam formed from a mixture of argon and oxygen was used to sputter the nickel foil. Different volume ratios of argon:oxygen in mixture were used, ranging from 1:0 to 1:4. Deposited layers were characterized in as-deposited state and after annealing at temperature of 400°C. The study of electrophysical properties (sheet resistance, mobility and concentration ofcharge carriers) was performed by four point Van der Pauw technique and Hall measurements respectively. Hall measurements revealed majority charge carriers to be electrons. For as-deposited layers electron surface concentration decreases with increasingamount of oxygen in ion beam and is in range (5 - 23) x 10^20 m^-2 for above mentioned range of argon:oxygen ratios. According to this trend the sheet resistance of the layers increases with higher amount of oxygen in ion beam in the inte

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2012 Conference Proceedings 4th International conference

ISBN

978-80-87294-32-1

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

1-6

Název nakladatele

TANGER

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

23. 10. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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