Characterization of the Nanostructured Nickel Oxide Layers Prepared by Ion Beam Sputtering
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F11%3A00435939" target="_blank" >RIV/61389005:_____/11:00435939 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Characterization of the Nanostructured Nickel Oxide Layers Prepared by Ion Beam Sputtering
Popis výsledku v původním jazyce
Nanostructured nickel oxide layers (thickness cca 100 nm) were prepared by bombardment of nickel foil with ion beam created from a mixture of argon and oxygen. Different volume ratios of argon:oxygen mixture were used, ranging from 4:1 to 1:3. Composition of the resulting layers was analyzed by RBS, morphology by AFM and main crystal orientation of the sample by XRD. The electrophysical properties (resistivity, concentration of charge carriers) were measured by four point Van der Pauw technique and Hallmeasurement respectively. Prepared samples were characterized in as-deposited state and after annealing with varying temperature of treatment. Chemical composition (i.e. stoichiometry) of the as-deposited samples with different argon: oxygen ratio was related to their electrophysical parameters. Hall measurements are showing majority charge carriers to be electrons - surface concentration (0.5 - 2.3) x 10(21) m(-2) - suggesting prevailing metallic conductivity. Resistivity of the sample
Název v anglickém jazyce
Characterization of the Nanostructured Nickel Oxide Layers Prepared by Ion Beam Sputtering
Popis výsledku anglicky
Nanostructured nickel oxide layers (thickness cca 100 nm) were prepared by bombardment of nickel foil with ion beam created from a mixture of argon and oxygen. Different volume ratios of argon:oxygen mixture were used, ranging from 4:1 to 1:3. Composition of the resulting layers was analyzed by RBS, morphology by AFM and main crystal orientation of the sample by XRD. The electrophysical properties (resistivity, concentration of charge carriers) were measured by four point Van der Pauw technique and Hallmeasurement respectively. Prepared samples were characterized in as-deposited state and after annealing with varying temperature of treatment. Chemical composition (i.e. stoichiometry) of the as-deposited samples with different argon: oxygen ratio was related to their electrophysical parameters. Hall measurements are showing majority charge carriers to be electrons - surface concentration (0.5 - 2.3) x 10(21) m(-2) - suggesting prevailing metallic conductivity. Resistivity of the sample
Klasifikace
Druh
D - Stať ve sborníku
CEP obor
BG - Jaderná, atomová a molekulová fyzika, urychlovače
OECD FORD obor
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Návaznosti výsledku
Projekt
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Návaznosti
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Ostatní
Rok uplatnění
2011
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název statě ve sborníku
NANOCON 2011, Conference Proceedings, 3 rd International Conference
ISBN
978-80-87294-27-7
ISSN
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e-ISSN
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Počet stran výsledku
4
Strana od-do
674-677
Název nakladatele
TANGER Ltd., Ostrava
Místo vydání
Brno
Místo konání akce
Brno
Datum konání akce
21. 9. 2011
Typ akce podle státní příslušnosti
WRD - Celosvětová akce
Kód UT WoS článku
000306686700111