Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F11%3A%230001790" target="_blank" >RIV/46747885:24220/11:#0001790 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations

Popis výsledku v původním jazyce

A phase field simulations of the polarisation reversal against the applied electric field in ferroelectric thin films, which is observed after poling of a ferroelectric film with a large electric field applied to a conductive tip of an atomic force microscope (AFM), is presented. Recent advances in the development of hard-disk-like data storage device that uses ferroelectric nano-domains in ferroelectric single crystals stimulate the interest of scientists in the study of domain dynamics. It is known that free charges, which can be injected from the AFM tip during the polarization reversal process into the ferroelectric film or on its surface, have a great effect on the stability of the reversed domains and can yield to several quite different scenarios during the domain reversal process. Since the role of free charges is not understood in great details yet, the aforementioned issues have motivated the study presented in this paper, where we will analyse the role of free charges during

Název v anglickém jazyce

Domain back-switching due to the free charge injection under the AFM tip studied by phase field simulations

Popis výsledku anglicky

A phase field simulations of the polarisation reversal against the applied electric field in ferroelectric thin films, which is observed after poling of a ferroelectric film with a large electric field applied to a conductive tip of an atomic force microscope (AFM), is presented. Recent advances in the development of hard-disk-like data storage device that uses ferroelectric nano-domains in ferroelectric single crystals stimulate the interest of scientists in the study of domain dynamics. It is known that free charges, which can be injected from the AFM tip during the polarization reversal process into the ferroelectric film or on its surface, have a great effect on the stability of the reversed domains and can yield to several quite different scenarios during the domain reversal process. Since the role of free charges is not understood in great details yet, the aforementioned issues have motivated the study presented in this paper, where we will analyse the role of free charges during

Druh

A - Audiovizuální tvorba

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP204%2F10%2F0616" target="_blank" >GAP204/10/0616: Moderní pizeoelektrické perovskity: kmity krystalové mřížky a doménové stěny</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

ISBN

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Místo vydání

Vancouver BC, Canada

Název nakladatele resp. objednatele

Simon Fraser University, Vancouver, Canada

Verze

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Identifikační číslo nosiče

PFM-ISAF-2011, Vancouver, Canada