Bulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F21%3A00008690" target="_blank" >RIV/46747885:24220/21:00008690 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389021:_____/21:00555694

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/2040-8986/abe450" target="_blank" >https://iopscience.iop.org/article/10.1088/2040-8986/abe450</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/2040-8986/abe450" target="_blank" >10.1088/2040-8986/abe450</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Bulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputtering

Popis výsledku v původním jazyce

The nonlinear optical second harmonic generation (SHG) in Si3N4 has attracted considerable attention due to a variety of promising applications in optoelectronics. However, reports on SHG in Si3N4 thin films and microstructures lead to diverse conclusions about the SHG origin, pointing towards the Si3N4 bulk, as well as to the Si3N4-Si interface. Here we report on the measurement of polarization-resolved angle-dependent SHG in Si3N4 thin films in the reflective mode. This mode allowed us to measure the nonlinear response of Si3N4 thin films on the Si single crystal substrate. By measuring three samples deposited via ion beam sputtering, we were able to analyze the bulk and interface contributions. We have demonstrated that apart from the bulk SHG, the Si3N4-Si interface contributes with a significant amount of SHG for the thin sample (600 nm). Our result provides a link between the previous measurements in the Si3N4 thin films and on the microstructures.

Název v anglickém jazyce

Bulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputtering

Popis výsledku anglicky

The nonlinear optical second harmonic generation (SHG) in Si3N4 has attracted considerable attention due to a variety of promising applications in optoelectronics. However, reports on SHG in Si3N4 thin films and microstructures lead to diverse conclusions about the SHG origin, pointing towards the Si3N4 bulk, as well as to the Si3N4-Si interface. Here we report on the measurement of polarization-resolved angle-dependent SHG in Si3N4 thin films in the reflective mode. This mode allowed us to measure the nonlinear response of Si3N4 thin films on the Si single crystal substrate. By measuring three samples deposited via ion beam sputtering, we were able to analyze the bulk and interface contributions. We have demonstrated that apart from the bulk SHG, the Si3N4-Si interface contributes with a significant amount of SHG for the thin sample (600 nm). Our result provides a link between the previous measurements in the Si3N4 thin films and on the microstructures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Optics (United Kingdom)

ISSN

2040-8978

e-ISSN

—

Svazek periodika

23

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

—

Kód UT WoS článku

000629544000001

EID výsledku v databázi Scopus

2-s2.0-85103401451