Toward Expanding the Optical Response of Ag2CrO4 and Bi2O3 by Their Laser-Mediated Heterojunction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24620%2F20%3A00007911" target="_blank" >RIV/46747885:24620/20:00007911 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c08301" target="_blank" >https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c08301</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpcc.0c08301" target="_blank" >10.1021/acs.jpcc.0c08301</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Toward Expanding the Optical Response of Ag2CrO4 and Bi2O3 by Their Laser-Mediated Heterojunction

Popis výsledku v původním jazyce

The formation of heterojunctions between semiconductors with distinct properties usually expands their capabilities. In this context, many methodologies have been employed in pursuing efficient and fruitful heterojunctions. However, poor attention has been paid to the employment of photonics-based strategies, which lately demonstrated to have great potential for the structural modification of semiconductors. In the current work, we report the laser-mediated generation of heterojunctions between Ag2CrO4 and Bi2O3, two semiconductors with contrasting properties. The products were prepared by the laser irradiation of different semiconductor's mixture ratios and further analyzed using various electron-and photon-based characterization techniques, different from mechanical grinding, which is considered the most straightforward way to obtain heterojunctions. The laser's intense optical field prompted not only the formation of tight and uniform junctions between the composing semiconductors but also induced Ag and Bi nanoparticles' production on their surfaces. This resulted in a modulation of the optical band gap to the narrowest value found in the semiconductor components and low recombination of the photoinduced charge carriers regardless of the amount ratio of the composing semiconductors. Therefore, this work will be of great importance for the creation of materials with a potential exploitability in the light-powered sectors.

Název v anglickém jazyce

Toward Expanding the Optical Response of Ag2CrO4 and Bi2O3 by Their Laser-Mediated Heterojunction

Popis výsledku anglicky

The formation of heterojunctions between semiconductors with distinct properties usually expands their capabilities. In this context, many methodologies have been employed in pursuing efficient and fruitful heterojunctions. However, poor attention has been paid to the employment of photonics-based strategies, which lately demonstrated to have great potential for the structural modification of semiconductors. In the current work, we report the laser-mediated generation of heterojunctions between Ag2CrO4 and Bi2O3, two semiconductors with contrasting properties. The products were prepared by the laser irradiation of different semiconductor's mixture ratios and further analyzed using various electron-and photon-based characterization techniques, different from mechanical grinding, which is considered the most straightforward way to obtain heterojunctions. The laser's intense optical field prompted not only the formation of tight and uniform junctions between the composing semiconductors but also induced Ag and Bi nanoparticles' production on their surfaces. This resulted in a modulation of the optical band gap to the narrowest value found in the semiconductor components and low recombination of the photoinduced charge carriers regardless of the amount ratio of the composing semiconductors. Therefore, this work will be of great importance for the creation of materials with a potential exploitability in the light-powered sectors.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20500 - Materials engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry C

ISSN

1932-7447

e-ISSN

—

Svazek periodika

124

Číslo periodika v rámci svazku

48

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

26404-26414

Kód UT WoS článku

000598118800034

EID výsledku v databázi Scopus

2-s2.0-85096592605