Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F19%3A43955504" target="_blank" >RIV/49777513:23220/19:43955504 - isvavai.cz</a>

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/8781249" target="_blank" >https://ieeexplore.ieee.org/document/8781249</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ISIE.2019.8781249" target="_blank" >10.1109/ISIE.2019.8781249</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation

Popis výsledku v původním jazyce

This paper deals with the verification of the maximum current rating of MOSFET transistors in a discrete package TO-247AC. The main motivation for this analysis was the redesign of AC power drive chain for electric go kart with three phase power converter of the output nominal power 10kW, a supply voltage 48V and minimal switching frequency 50kHz. The inverter must be able to operate with short-term current overload up to 450A. A parallel combination of three power transistors is used to design the basic power switch. The HEXFET Power MOSFET transistor (IRFP4468PdF in a discrete case TO-247AC) was chosen as a basic structural element. We used DC analysis to verify the proper ies and imits of the discrete case TO-247AC. The maximum rated current through the MOSFET transistor was determined with respect to the maximum chip temperature and enclosure limitation. In order to accurately verify the measuring results f transistor temperature, a thermo-camera was used (the color is used to define the emissivity of measured object with reference ε = 0,9). Temperature was also measured by a thermometer PT100 sensor and estimated from the forward voltage on freewheeling diode.

Název v anglickém jazyce

Verification of the current load capacity of the MOSFET transistor for low-voltage application using temperature estimation

Popis výsledku anglicky

This paper deals with the verification of the maximum current rating of MOSFET transistors in a discrete package TO-247AC. The main motivation for this analysis was the redesign of AC power drive chain for electric go kart with three phase power converter of the output nominal power 10kW, a supply voltage 48V and minimal switching frequency 50kHz. The inverter must be able to operate with short-term current overload up to 450A. A parallel combination of three power transistors is used to design the basic power switch. The HEXFET Power MOSFET transistor (IRFP4468PdF in a discrete case TO-247AC) was chosen as a basic structural element. We used DC analysis to verify the proper ies and imits of the discrete case TO-247AC. The maximum rated current through the MOSFET transistor was determined with respect to the maximum chip temperature and enclosure limitation. In order to accurately verify the measuring results f transistor temperature, a thermo-camera was used (the color is used to define the emissivity of measured object with reference ε = 0,9). Temperature was also measured by a thermometer PT100 sensor and estimated from the forward voltage on freewheeling diode.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/EF18_069%2F0009855" target="_blank" >EF18_069/0009855: Elektrotechnické technologie s vysokým podílem vestavěné inteligence</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the IEEE International Symposium on Industrial Electronics (ISIE 2019)

ISBN

978-1-72813-666-0

ISSN

2163-5137

e-ISSN

2163-5145

Počet stran výsledku

6

Strana od-do

1014-1019

Název nakladatele

IEEE

Místo vydání

Piscataway

Místo konání akce

Vancouver, BC, Canada

Datum konání akce

12. 6. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000500998700152