High-speed switch based on MOSFETs

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00300823" target="_blank" >RIV/68407700:21230/16:00300823 - isvavai.cz</a>
Výsledek na webu
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Jazyk výsledku
angličtina
Název v původním jazyce
High-speed switch based on MOSFETs
Popis výsledku v původním jazyce
This article describes both the design and construction of the switch that enables switching with a high di/dt rate and a special type of a shunt for measuring current. A designed circuit is based on a parallel connection of high power MOSFET transistors with independent drivers. Negative influence of parasitic inductions of transistor leads was analyzed. Film capacitor testing is based on applying a very fast discharging process. Current and voltage waveforms arising during the measurement are used to create an equivalent circuit of the capacitor.
Název v anglickém jazyce
High-speed switch based on MOSFETs
Popis výsledku anglicky
This article describes both the design and construction of the switch that enables switching with a high di/dt rate and a special type of a shunt for measuring current. A designed circuit is based on a parallel connection of high power MOSFET transistors with independent drivers. Negative influence of parasitic inductions of transistor leads was analyzed. Film capacitor testing is based on applying a very fast discharging process. Current and voltage waveforms arising during the measurement are used to create an equivalent circuit of the capacitor.

Rok uplatnění
2016
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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